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Multifunctional UV photodetect-memristors based on area selective fabricated GaS/graphene/GaN van der Waals heterojunctions.
Mater Horiz
January 2025
School of Materials Scicence and Engineering, South China University of Technology, Guangzhou, 510640, China.
Multifunctional devices based on van der Waals heterojunctions have drawn significant attention owing to their portable size, low power consumption and various application scenarios. However, high fabrication equipment requirements, complex device structures and limited operating conditions hinder their potential value. Herein, multifunctional UV photodetect-memristors based on GaS/graphene/GaN van der Waals heterojunctions area selective deposition have been proposed for the first time.
View Article and Find Full Text PDFWe investigate the ultrafast electron correlation effects during non-sequential double ionization (NSDI) of argon subjected to a combined femtosecond field composed of counter-rotating two-color circularly polarized (TCCP) pulse laser using a 3D classical ensemble model (CEM). Our simulation results reveal that manipulation of the carrier-envelope phase (CEP) of the external driving field modulates the dynamical behavior of the two electrons, resulting in a notable sensitivity of their momentum distribution to the relative phase of two components of the counter-rotating TCCP field. Through inversion analysis, we uncover the capability to direct electrons toward a single direction, thereby facilitating focused ion-electron collisions on the attosecond timescale.
View Article and Find Full Text PDFInsulator-metal transition in VO film on sapphire studied by broadband dielectric spectroscopy.
Sci Rep
January 2025
Prokhorov General Physics Institute of the Russian Academy of Sciences, Moscow, 119991, Russia.
Vanadium dioxide ([Formula: see text]) is a favorable material platform of modern optoelectronics, since it manifests the reversible temperature-induced insulator-metal transition (IMT) with an abrupt and rapid changes in the conductivity and optical properties. It makes possible applications of such a phase-change material in the ultra-fast optoelectronics and terahertz (THz) technology. Despite the considerable interest to this material, data on its broadband electrodynamic response in different states are still missing in the literature.
View Article and Find Full Text PDFUltrafast Charge Carrier Dynamics in Vanadium Dioxide, VO: Nonequilibrium Contributions to the Photoinduced Phase Transitions.
J Phys Chem Lett
January 2025
Department of Mechanical and Aerospace Engineering, University of Virginia, Charlottesville, Virginia 22904, United States.
Vanadium oxide (VO) is an exotic phase-change material with diverse applications ranging from thermochromic smart windows to thermal sensors, neuromorphic computing, and tunable metasurfaces. Nonetheless, the mechanism responsible for its metal-insulator phase transition remains a subject of vigorous debate. Here, we investigate the ultrafast dynamics of the photoinduced phase transition in VO under low perturbation conditions.
View Article and Find Full Text PDFUltrafast broadband spectroscopy of widely spread excitonic features in WSe nanosheets.
Nanoscale
January 2025
School of Chemical Sciences, National Institute of Science Education and Research (NISER), Bhubaneswar, Odisha 752050, India.
The performance of an optoelectronic device is largely dependent on the light harvesting properties of the active material as well as the dynamic behaviour of the photoexcited charge carriers upon absorption of light. Recently, atomically thin two-dimensional transition metal dichalcogenides (2D TMDCs) have garnered attention as highly prospective materials for advanced ultrathin solar cells and other optoelectronic applications, owing to their strong interaction with electromagnetic radiation, substantial optical conductivity, and impressive charge carrier mobility. WSe is one such extremely promising solar energy material.
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