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Ultrafast Charge Carrier Dynamics in Vanadium Dioxide, VO: Nonequilibrium Contributions to the Photoinduced Phase Transitions.
J Phys Chem Lett
January 2025
Department of Mechanical and Aerospace Engineering, University of Virginia, Charlottesville, Virginia 22904, United States.
Vanadium oxide (VO) is an exotic phase-change material with diverse applications ranging from thermochromic smart windows to thermal sensors, neuromorphic computing, and tunable metasurfaces. Nonetheless, the mechanism responsible for its metal-insulator phase transition remains a subject of vigorous debate. Here, we investigate the ultrafast dynamics of the photoinduced phase transition in VO under low perturbation conditions.
View Article and Find Full Text PDFThe First Molecular Ferroelectric Mott Insulator.
Adv Mater
January 2025
Jiangsu Key Laboratory for Science and Applications of Molecular Ferroelectrics, Southeast University, Nanjing, 211189, P. R. China.
With the discovery of colossal magnetoresistance materials and high-temperature superconductors, Mott insulators can potentially undergo a transition from insulating state to metallic state. Here, in molecular ferroelectrics system, a Mott insulator of (CHN)VO has been first synthesized, which is a 2D organic-inorganic ferroelectric with composition of layered vanadium oxide and quinuclidine ring. Interestingly, accompanied by the ferroelectric phase transition, (CHN)VO changes sharply in conductivity.
View Article and Find Full Text PDFX-ray Nanoimaging of a Heterogeneous Structural Phase Transition in VO.
Nano Lett
January 2025
Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14853, United States.
Controlling the Mott transition through strain engineering is crucial for advancing the development of memristive and neuromorphic computing devices. Yet, Mott insulators are heterogeneous due to intrinsic phase boundaries and extrinsic defects, posing significant challenges to fully understanding the impact of microscopic distortions on the local Mott transition. Here, using a synchrotron-based scanning X-ray nanoprobe, we studied the real-space structural heterogeneity during the structural phase transition in a VO thin film.
View Article and Find Full Text PDFArtificial Photothermal Nociceptor Using Mott Oscillators.
Adv Sci (Weinh)
December 2024
Department of Materials Science and Engineering, Seoul National University, Seoul, 08826, Republic of Korea.
Bioinspired sensory systems based on spike neural networks have received considerable attention in resolving high energy consumption and limited bandwidth in current sensory systems. To efficiently produce spike signals upon exposure to external stimuli, compact neuron devices are required for signal detection and their encoding into spikes in a single device. Herein, it is demonstrated that Mott oscillative spike neurons can integrate sensing and ceaseless spike generation in a compact form, which emulates the process of evoking photothermal sensing in the features of biological photothermal nociceptors.
View Article and Find Full Text PDFStudy on the piezoresistivity of Cr-doped VO thin film for MEMS sensor applications.
Microsyst Nanoeng
December 2024
Micro- and Nanosystems, Department of Electrical Engineering, KU Leuven, Kasteelpark Arenberg 10, 3001, Leuven, Belgium.
Cr-doped VO thin film shows a huge resistivity change with controlled epitaxial strain at room temperature as a result of a gradual Mott metal-insulator phase transition with strain. This novel piezoresistive transduction principle makes Cr-doped VO thin film an appealing piezoresistive material. To investigate the piezoresistivity of Cr-doped VO thin film for implementation in MEMS sensor applications, the resistance change of differently orientated Cr-doped VO thin film piezoresistors with external strain change was measured.
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