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http://dx.doi.org/10.1103/physrevb.50.3246 | DOI Listing |
Nature
January 2025
Department of Physics, Massachusetts Institute of Technology, Cambridge, MA, USA.
Electrons in topological flat bands can form new topological states driven by correlation effects. The pentalayer rhombohedral graphene/hexagonal boron nitride (hBN) moiré superlattice was shown to host fractional quantum anomalous Hall effect (FQAHE) at approximately 400 mK (ref. ), triggering discussions around the underlying mechanism and role of moiré effects.
View Article and Find Full Text PDFRSC Adv
January 2025
Faculty of Physics & Engineering Physics, VNUHCM-University of Science Ho Chi Minh City 70000 Vietnam
Direct current magnetron sputtering was employed to fabricate In-N dual-doped SnO films, with varying concentrations of N in a mixed sputtering gas of N and argon (Ar). The quantity of -substituted O elements in the SnO lattice was confirmed through energy-dispersive X-ray spectroscopy (EDX) and X-ray photoelectron spectroscopy (XPS). A comprehensive investigation of properties of the In-N dual-doped SnO films was conducted using various techniques, including X-ray diffraction analysis, field-emission scanning electron microscopy (FESEM), atomic force microscopy (AFM), ultraviolet absorption spectroscopy, Hall effect measurements, and current-voltage (-) characteristic assessments.
View Article and Find Full Text PDFMaterials (Basel)
December 2024
School of Electrical and Computer Engineering, Ben Gurion University of the Negev, Beer Sheba 8410501, Israel.
Nowadays, polycrystalline lead telluride is one of the premier substances for thermoelectric devices while remaining a hopeful competitor to current semiconductor materials used in mid-infrared photonic applications. Notwithstanding that, the development of reliable and reproducible routes for the synthesis of PbTe thin films has not yet been accomplished. As an effort toward this aim, the present article reports progress in the growth of polycrystalline indium-doped PbTe films and their study.
View Article and Find Full Text PDFJ Elect Propuls
December 2024
Georgia Institute of Technology, Atlanta, GA 30332 USA.
A previous companion paper introduced a current pathways model that represents the electrical coupling between the Hall effect thruster (HET) and the ground-based vacuum test facility operational environment. In this work, we operated a 7-kW class HET at 4.5 kW, 15 A and 6 kW, 20 A on krypton to quantify aspects of the current pathways model to characterize the role metal vacuum chambers play in the thruster's discharge circuit as a function of discharge current.
View Article and Find Full Text PDFSci Rep
December 2024
Department of Physics, University of Liverpool, Oxford Street, Liverpool, L69 7ZE, UK.
Topological semimetals have recently garnered widespread interest in the quantum materials research community due to their symmetry-protected surface states with dissipationless transport which have potential applications in next-generation low-power electronic devices. One such material, [Formula: see text], exhibits Dirac nodal arcs and although the topological properties of single crystals have been investigated, there have been no reports in crystalline thin film geometry. We examined the growth of [Formula: see text] heterostructures on a range of single crystals by optimizing the electron beam evaporation of Pt and Sn and studied the effect of vacuum thermal annealing on phase and crystallinity.
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