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Unveiling a Tunable Moiré Bandgap in Bilayer Graphene/hBN Device by Angle-Resolved Photoemission Spectroscopy.
Adv Sci (Weinh)
January 2025
School of Physical Science and Technology, ShanghaiTech Laboratory for Topological Physics, ShanghaiTech University, Shanghai, 201210, P. R. China.
Over the years, great efforts have been devoted in introducing a sizable and tunable band gap in graphene for its potential application in next-generation electronic devices. The primary challenge in modulating this gap has been the absence of a direct method for observing changes of the band gap in momentum space. In this study, advanced spatial- and angle-resolved photoemission spectroscopy technique is employed to directly visualize the gap formation in bilayer graphene, modulated by both displacement fields and moiré potentials.
View Article and Find Full Text PDFArtificial Fine-Tuned van Hove Singularity in Twisted Bilayer and Double-Twist Trilayer Graphene with Enhanced Absorption for Photodetection and Photoemission in the Near-Infrared II Range.
ACS Appl Mater Interfaces
January 2025
State Key Lab of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, Sun Yat-sen University, Guangzhou 510275, China.
Optical responses of twisted bilayer graphene at targeted wavelengths can be amplified by leveraging energy levels of van Hove singularities (VHS) via tuning periods of moiré superlattices. Therefore, precise control of twist angles as well as the moiré superlattices is necessary for fabricating integrated optoelectronic devices such as photodetectors and emitters. Although recent advances in twist angle control help the observation of correlated states in twisted magic-angle graphene structures, the impact of such precise control on enhanced optical absorption is still under investigation.
View Article and Find Full Text PDFInterfacial Elemental Analysis of Slanted Edge-Contacted Monolayer MoS Transistors via Directionally Angled Etching.
ACS Nano
January 2025
Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei 106319, Taiwan.
Edge contacts offer a significant advantage for enhancing the performance of semiconducting transition metal dichalcogenide (TMDC) devices by interfacing with the metallic contacts on the lateral side, which allows the encapsulation of all of the channel material. However, despite intense research, the fabrication of feasible electrical edge contacts to TMDCs to improve device performance remains a great challenge, as interfacial chemical characterization via conventional methods is lacking. A major bottleneck in explicitly understanding the chemical and electronic properties of the edge contact at the metal-two-dimensional (2D) semiconductor interface is the small cross section when characterizing nominally one-dimensional edge contacts.
View Article and Find Full Text PDFDoping Tunable CDW Phase Transition in Bulk 1T-ZrSe.
Nano Lett
January 2025
Department of Quantum Matter Physics, University of Geneva, 24, Quai Ernest-Ansermet, 1211 Geneva 4, Switzerland.
Tunable electronic properties in transition metal dichalcogenides (TMDs) are essential to further their use in device applications. Here, we present a comprehensive scanning tunneling microscopy and spectroscopy study of a doping-induced charge density wave (CDW) in semiconducting bulk 1T-ZrSe. We find that atomic impurities that locally shift the Fermi level () into the conduction band trigger a CDW reconstruction concomitantly to the opening of a gap at .
View Article and Find Full Text PDFPhotoemission Study of GaN Passivation Layers and Band Alignment at GaInP(100) Heterointerfaces.
ACS Appl Mater Interfaces
January 2025
Grundlagen von Energiematerialien, Institut für Physik, Technische Universität Ilmenau, 98693 Ilmenau, Germany.
To date, III-V semiconductor-based tandem devices with GaInP top photoabsorbers show the highest solar-to-electricity or solar-to-fuel conversion efficiencies. In photoelectrochemical (PEC) cells, however, III-V semiconductors are sensitive, in terms of photochemical stability and, therefore, require suitable functional layers for electronic and chemical passivation. GaN films are discussed as promising options for this purpose.
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