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Unexpected XPS Binding Energy Observations Further Highlighted by DFT Calculations of Ruthenocene-Containing [Ir(ppy)(RCOCHCORc)] Complexes: Cytotoxicity and Crystal Structure of [Ir(ppy)(FcCOCHCORc)].
Molecules
November 2024
Department of Chemistry, University of the Free State, Bloemfontein 9300, South Africa.
The series of iridium(III) complexes, [Ir(ppy)(RCOCHCOR')], with R = CH and R' = CH (), Rc (), and Fc (), as well as R = Rc and R' = Rc () or Fc (), and R = R' = Fc (), ppy = 2-phenylpyridinyl, Fc = Fe(η-CH)(η-CH), and Rc = Ru(η-CH)(η-CH), has been investigated by single-crystal X-ray crystallography and X-ray photoelectron spectroscopy (XPS) supplemented by DFT calculations. Here, in the range of 3.74 ≤ Σχ ≤ 4.
View Article and Find Full Text PDFReliable Low-Current and Multilevel Memristive Electrochemical Neuromorphic Devices with Semi-Metal Sb Filament.
Small
October 2024
School of Materials and Energy, Lanzhou University, Lanzhou, 730000, China.
Memristors are used in artificial neural networks owing to their exceptional integration capabilities and scalability. However, traditional memristors are hampered by limited resistance states and randomness, which curtails their application. The migration of metal ions critically influences the number of conductance states and the linearity of weight updates.
View Article and Find Full Text PDFSymmetry selected quantum dynamics of few electrons in nanopillar transistors.
Sci Rep
December 2019
Department of Electronic Engineering, I-Shou University, Kaohsiung, Taiwan, ROC.
Study on single electron tunnel using current-voltage characteristics in nanopillar transistors at 298 K show that the mapping between the N electron excited in the central box ∼8.5 × 8.5 × 3 nm and the N tunnel peak is not in the one-to-one correspondence to suggest that the total number N of electrons is not the best quantum number for characterizing the quality of single electron tunnel in a three-dimensional quantum box transistor.
View Article and Find Full Text PDFNeuroinspired unsupervised learning and pruning with subquantum CBRAM arrays.
Nat Commun
December 2018
Department of Electrical and Computer Engineering, University of California, San Diego, La Jolla, CA, 92093, USA.
Resistive RAM crossbar arrays offer an attractive solution to minimize off-chip data transfer and parallelize on-chip computations for neural networks. Here, we report a hardware/software co-design approach based on low energy subquantum conductive bridging RAM (CBRAM®) devices and a network pruning technique to reduce network level energy consumption. First, we demonstrate low energy subquantum CBRAM devices exhibiting gradual switching characteristics important for implementing weight updates in hardware during unsupervised learning.
View Article and Find Full Text PDFConductance steps in electromigrated Bi nanoconstrictions.
Phys Chem Chem Phys
April 2013
Laboratorio de Microscopías Avanzadas (LMA), Instituto de Nanociencia de Aragón (INA), Universidad de Zaragoza, Zaragoza, Spain.
Bismuth nanostructures of initial lateral size of about 150 nm were successfully electromigrated at room temperature under high vacuum conditions through the application of voltage ramps and accurate control of their conductance. The imaging of the nanogap formation was followed by scanning electron microscopy. An appropriate design of the initial Bi nanostructures has made the electromigration process of semimetallic Bi feasible.
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