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Chemical Pressure-Induced Unconventional Band Convergence Leads to High Thermoelectric Performance in SnTe.

Adv Sci (Weinh)

January 2025

Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, Fujian, 350108, P. R. China.

Article Synopsis
  • Band convergence positively impacts thermoelectric performance by improving both effective mass and carrier mobility through increased valley degeneracy, unlike traditional methods that sacrifice one for the other.
  • Under pressure, particularly at 5 GPa, SnTe's Σ-band rises, narrowing the energy difference between L- and Σ-bands and achieving a high power factor of 119.2 µW cm K at 300 K for p-type SnTe.
  • Chemical pressure enhances conduction band convergence for n-type SnTe, resulting in improved thermoelectric efficiency, with predicted ZT values of 2.12 at 650 K and 2.55 at 850 K, indicating significant performance increases.
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Using the example of III-V nitrides crystallizing in a wurtzite structure (GaN, AlN, and InN), this review presents the special role of hydrostatic pressure in studying semiconductor properties. Starting with a brief description of high-pressure techniques for growing bulk crystals of nitride compounds, we focus on the use of hydrostatic pressure techniques in both experimental and theoretical investigations of the special properties of nitride compounds, their alloys, and quantum structures. The bandgap pressure coefficient is one of the most important parameters in semiconductor physics.

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Researchers are now focusing on inorganic halide-based cubic metal perovskites that are not toxic as they strive to commercialize optoelectronic products and solar cells derived from perovskites. This study explores the properties of new lead-free compounds, specifically GaGeX (where X = Cl, Br, and I), by executing first-principles Density Functional Theory (DFT) to analyze their optical, electronic, mechanical, and structural characteristics under pressure. Assessing the reliability of all compounds is done meticulously by applying the criteria of Born stability and calculating the formation energy.

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We present a comprehensive study of the inhomogeneous mixed-valence compound, EuPdS, by electrical transport, X-ray diffraction, time-domain Eu synchrotron Mössbauer spectroscopy, and X-ray absorption spectroscopy measurements under high pressure. Electrical transport measurements show that the antiferromagnetic ordering temperature, , increases rapidly from 2.8 K at ambient pressure to 23.

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Pressure-Modulated Interface Engineering toward Realizing Core@Shell Configuration Transition.

Nano Lett

December 2023

State Key Laboratory of Superhard Materials, College of Physics, Jilin University, Changchun 130012, People's Republic of China.

The strained interface of core@shell nanocrystals (NCs) can effectively modulate the energy level alignment, thereby significantly affecting the optical properties. Herein, the unique photoluminescence (PL) response of doped Mn ions is introduced as a robust probe to detect the targeted pressure-strain relation of CdS@ZnS NCs. Results show that the core experiences actually less pressure than the applied external pressure, attributed to the pressure-induced optimized interface that reduces the compressive strain on core.

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