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Electrical and thermal characterisation of liquid metal thin-film Ga[Formula: see text]O[Formula: see text]-SiO[Formula: see text] heterostructures.
Sci Rep
March 2023
HH Wills Physics Laboratory, University of Bristol, Bristol, BS8 1TL, UK.
Heterostructures of Ga[Formula: see text]O[Formula: see text] with other materials such as Si, SiC or diamond, are a possible way of addressing the low thermal conductivity and lack of p-type doping of Ga[Formula: see text]O[Formula: see text] for device applications, as well as of improving device reliability. In this work we study the electrical and thermal properties of Ga[Formula: see text]O[Formula: see text]-SiO[Formula: see text] heterostructures. Here, thin-film gallium oxide with thickness ranging between 8 and 30 nm was deposited onto a silicon substrate with a thermal oxide by means of oxidised liquid gallium layer delamination.
View Article and Find Full Text PDFSpatial decoupling of light absorption and reaction sites in n-Si photocathodes for solar water splitting.
Natl Sci Rev
August 2021
School of Chemical Engineering and Technology, Key Laboratory for Green Chemical Technology of Ministry of Education, Tianjin University, Tianjin 300072, China.
Metal-insulator-semiconductor (MIS) photocathodes offer a simple alternative to p-n junction photocathodes in photoelectrochemical water splitting. However, the parasitic light absorption of catalysts and metal layers in the MIS junction, as well as the lack of low work function metals to form a large band offset with p-Si, severely limit their performance. This paper describes an MIS photocathode fabricated from n-Si, rather than the commonly used p-Si, to spatially decouple light absorption from reaction sites, which enables the majority carriers, instead of the commonly used minority carriers, to drive the surface reaction, making it possible to place the reaction sites far away from the light absorption region.
View Article and Find Full Text PDFDeep-Ultraviolet Photodetection Using Single-Crystalline β-GaO/NiO Heterojunctions.
ACS Appl Mater Interfaces
September 2019
In recent years, β-GaO/NiO heterojunction diodes have been studied, but reports in the literature lack an investigation of an epitaxial growth process of high-quality single-crystalline β-GaO/NiO thin films via electron microscopy analysis and the fabrication and characterization of an optoelectronic device based on the resulting heterojunction stack. This work investigates the thin-film growth of a heterostructure stack comprising n-type β-GaO and p-type cubic NiO layers grown consecutively on -plane sapphire using pulsed laser deposition, as well as the fabrication of solar-blind ultraviolet-C photodetectors based on the resulting p-n junction heterodiodes. Several characterization techniques were employed to investigate the heterostructure, including X-ray crystallography, ion beam analysis, and high-resolution electron microscopy imaging.
View Article and Find Full Text PDFTwo-dimensional transition-metal dichalcogenides-based ferromagnetic van der Waals heterostructures.
Nanoscale
November 2017
Department of Physics, Henan Normal University, Xinxiang 453007, China.
The lack of ferromagnetic (FM) van der Waals (vdW) heterostructures hinders the application of two-dimensional (2D) materials in spintronics, information memories and storage devices. Herein, we find theoretically that 2D transition-metal dichalcogenides-based vdW heterostructures, such as MoS/VS and WS/VS, possess excellent characteristics of stable stacking configurations, FM semiconducting ground states, high Curie temperatures, staggered band alignment and a large band offset. Fortunately, 100% spin-polarized currents at the Fermi level can be achieved under certain positive external electric fields, which can filter the current into a single spin channel.
View Article and Find Full Text PDFConduction Band Offset and Polarization Effects in InAs Nanowire Polytype Junctions.
Nano Lett
February 2017
Solid State Physics and NanoLund and ‡Center for Analysis and Synthesis, Lund University, S-221 00 Lund, Sweden.
Although zinc-blende (ZB) and wurtzite (WZ) structures differ only in the atomic stacking sequence, mixing of crystal phases can strongly affect the electronic properties, a problem particularly common to bottom up-grown nanostructures. A lack of understanding of the nature of electronic transport at crystal phase junctions thus severely limits our ability to develop functional nanowire devices. In this work we investigated electron transport in InAs nanowires with designed mixing of crystal structures, ZB/WZ/ZB, by temperature-dependent electrical measurements.
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