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Amorphous Carbon Monolayer: A van der Waals Interface for High-Performance Metal Oxide Semiconductor Devices.
ACS Nano
December 2024
Department of Materials Science and Engineering, Hanbat National University, Daejeon 34158, Republic of Korea.
Ultrasmall-scale semiconductor devices (≤5 nm) are advancing technologies, such as artificial intelligence and the Internet of Things. However, the further scaling of these devices poses critical challenges, such as interface properties and oxide quality, particularly at the high-/semiconductor interface in metal-oxide-semiconductor (MOS) devices. Existing interlayer (IL) methods, typically exceeding 1 nm thickness, are unsuitable for ultrasmall-scale devices.
View Article and Find Full Text PDFLong-wavelength infrared metamaterial absorber with polarization and angle insensitivity using compact hybrid cylindrical structures.
Nanoscale
December 2024
National Key Laboratory of Advanced Micro and Nano Fabrication Technology, Shanghai Jiao Tong University, Shanghai, 200240, China.
Broadband metamaterial absorbers in the long wavelength infrared region are promising in applications including thermal imaging, cloaking, radiative cooling and IR signature suppression. Although high absorption over the long wavelength infrared region has been extensively achieved, the challenge is to shrink both the thickness and lateral footprint of unit absorbing structures. Here, a compact broadband long wavelength infrared metamaterial absorber consisting of multilayered Ge/Ti/Ge/SiO hybrid cylindrical structures, whose period and thickness are only ∼1.
View Article and Find Full Text PDFUV/Ozone-Induced Interface Engineering for High-Performance Horizontal Organic Light-Emitting Transistors Operating at Low Voltage.
Small
December 2024
School of Advanced Materials, Peking University Shenzhen Graduate School, Peking University, Shenzhen, 518055, China.
Multifunctional organic light-emitting transistors (OLETs), which combine electric-switching and light-producing capabilities into a single device, are attracting increasing interest as promising candidates for new-generation display technology. Despite advancements in the design of organic luminescent materials and the optimization of device geometry configurations, maintaining operating voltage low while enhancing optical performances remains a key challenge in horizontally structured OLETs. Here, a simple and effective interfacial engineering strategy is employed to improve the optical properties of horizontal OLETs operating at low voltage, by introducing ultraviolet ozone (UVO)-induced surface modification on high-k dielectrics.
View Article and Find Full Text PDFEnhanced Electrical Performance of InAs Nanowire Field-Effect Transistors Based on the YO Isolation Layer.
ACS Appl Mater Interfaces
December 2024
Key Laboratory for the Physics and Chemistry of Nanodevices, School of Electronics, Peking University, Beijing 100871, China.
Nanowire (NW) field-effect transistors (FETs) have great potential in next-generation integrated circuits. InAs NWs are suitable for N-type transistors because of their excellent electrical properties. However, unlike the Si/SiO system, the loose and defective native oxide of InAs is unable to passivate the channel surface and serve as an efficient isolation layer (IL) in the gate stack.
View Article and Find Full Text PDFDilute nanocomposites for capacitive energy storage: progress, challenges and prospects.
Chem Sci
December 2024
Department of Materials Science and Engineering, The Pennsylvania State University, University Park PA 16802 USA
Electrostatic capacitors (ECs) are critical components in advanced electronics and electric power systems due to their rapid charge-discharge rate and high power density. While polymers are ideal for ECs due to their high voltage tolerance and mechanical flexibility, their low dielectric constants () and limited energy density remain significant limitations. Traditional polymer nanocomposites, which incorporate high- ceramic fillers, have shown promise in enhancing dielectric properties but often at the cost of electric breakdown strength and scalability.
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