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Doped Semiconductor-Nanocrystal Emitters with Optimal Photoluminescence Decay Dynamics in Microsecond to Millisecond Range: Synthesis and Applications.

ACS Cent Sci

January 2016

Center for Chemistry of Novel & High-Performance Materials, and Department of Chemistry, Zhejiang University, Hangzhou 310027, P. R. China.

Transition metal doped semiconductor nanocrystals (d-dots) possess fundamentally different emission properties upon photo- or electroexcitation, which render them as unique emitters for special applications. However, in comparison with intrinsic semiconductor nanocrystals, the potential of d-dots has been barely realized, because many of their unique emission properties mostly rely on precise control of their photoluminescence (PL) decay dynamics. Results in this work revealed that it would be possible to obtain bright d-dots with nearly single-exponential PL decay dynamics.

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We examine the two-photon exchange contribution to the eN --> edelta(1232) --> epiN process with the aim of a precision study of the ratios of electric quadrupole (E2) and Coulomb quadrupole (C2) to the magnetic dipole (M1) gamma*Ndelta transitions. We relate the two-photon exchange amplitude to the N --> delta generalized parton distributions and obtain a quantitative estimate of the two-photon effects. The two-photon exchange corrections to the C2/M1 ratio depend strongly on whether this quantity is obtained from an interference cross section or from the Rosenbluth-type cross sections, in similarity with the elastic, eN --> eN, process.

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High-precision 1H(e,e'p)pi(0) measurements at Q2 = 0.126 (GeV/c)2 are reported, which allow the determination of quadrupole amplitudes in the gamma*N-->Delta transition; they simultaneously test the reliability of electroproduction models. The derived quadrupole-to-dipole ( I = 3/2) amplitude ratios, R(SM) = (-6.

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