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Efficient Data Sampling Scheme to Reduce Acquisition Time in Statistical ALCHEMI.
Microscopy (Oxf)
January 2025
Department of Materials Physics, Graduate School of Engineering, Nagoya University, Chikusa-ku, Nagoya 464-8603, Japan.
The distribution of dopants in host crystals significantly influences the chemical and electronic properties of materials. Therefore, determining this distribution is crucial for optimizing material performance. The previously developed statistical ALCHEMI (St-ALCHEMI), an extension of the atom-location by channeling-enhanced microanalysis (ALCHEMI) technique, utilizes variations in electron channeling based on the beam direction relative to the crystal orientation.
View Article and Find Full Text PDFUnderstanding the Effect of Electron Irradiation on WS Nanotube Devices to Improve Prototyping Routines.
ACS Appl Electron Mater
December 2024
CEITEC, Brno University of Technology, Purkyňova 123, 61200 Brno, Czech Republic.
To satisfy the needs of the current technological world that demands high performance and efficiency, a deep understanding of the whole fabrication process of electronic devices based on low-dimensional materials is necessary for rapid prototyping of devices. The fabrication processes of such nanoscale devices often include exposure to an electron beam. A field effect transistor (FET) is a core device in current computation technology, and FET configuration is also commonly used for extraction of electronic properties of low-dimensional materials.
View Article and Find Full Text PDFThe Effect of Combining Femtosecond Laser and Electron Irradiation on Silica Glass.
Nanomaterials (Basel)
November 2024
Institut de Chimie Moléculaire et des Matériaux d'Orsay, Université Paris-Saclay, Rue du Doyen Georges Poitou, 91405 Orsay, France.
This study investigates the structural and optical responses of silica glass to femtosecond (fs) laser irradiation followed by high-energy electron (2.5 MeV, 4.9 GGy) irradiation.
View Article and Find Full Text PDFEffect of the surrounding environment on electron beam irradiation damage of enhanced green fluorescent protein.
Ultramicroscopy
January 2025
Department of Applied Physics and Chemical Engineering, Tokyo University of Agriculture and Technology, 2-24-16, Naka-cho, Koganei, Tokyo, 184-8588, Japan; Department of Applied Physics, Tokyo University of Agriculture and Technology, 2-24-16, Naka-cho, Koganei, Tokyo, 184-8588, Japan. Electronic address:
Fluorescent proteins exhibit fluorescence and photoconversion, which are used to study biological phenomena. Among these, enhanced green fluorescent protein (EGFP) emits cathodoluminescence when irradiated with electron beams; this phenomenon has numerous applications in new research tools for biological phenomena. However, bleaching during electron irradiation is a major problem.
View Article and Find Full Text PDFEffects of 10 keV Electron Irradiation on the Performance Degradation of SiC Schottky Diode Radiation Detectors.
Micromachines (Basel)
October 2024
National Key Laboratory of Intense Pulsed Radiation Simulation and Effect, Northwest Institute of Nuclear Technology, Xi'an 710024, China.
The silicon carbide (SiC) Schottky diode (SBD) detector in a SiC hybrid photomultiplier tube (HPMT) generates signals by receiving photocathode electrons with an energy of 10 keV. So, the performance of the SiC SBD under electron irradiation with an energy of 10 keV has an important significance for the application of the SiC-HPMT. However, studies on 10 keV radiation effects on the SiC SBDs were rarely reported.
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