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Blue Electroluminescent Carbon Dots Derived from Victorian Lignite.
ACS Omega
January 2025
Graduate School of Nanobioscience, Yokohama City University, 22-2 Seto, Kanazawa-ku, Yokohama 236-0027, Japan.
Carbon dots (CDs) derived from natural products have attracted considerable interest as eco-friendly materials with a wide range of applications, such as bioimaging, sensors, catalysis, and solar energy harvesting. Among these applications, electroluminescence (EL) is particularly desirable for light-emitting devices in display and lighting technologies. Typically, EL devices incorporating CDs feature a layered structure, where CDs function as the central emissive layer, flanked by charge transport layers and electrodes.
View Article and Find Full Text PDFHeat-Fluid-Solid-Coupled Model for Flue Gas Displacement of CH in Coal Seams and Its Applications.
ACS Omega
January 2025
College of Safety Science & Engineering, Liaoning Technical University, Huludao, Liaoning 125105, China.
The objective of this study was to evaluate the effect of injecting flue gas (CO, N, and O) originating from coal-fired power plants into a coal seam on CH extraction and CO geological storage. To this end, a multifield thermal-fluid-solid-coupled mathematical model of flue gas injection extraction was established. The results showed that with the increase in time increase, the volume concentration of CH decreased, but the CO, N, and O increased.
View Article and Find Full Text PDFGraphene/TiO Heterostructure Integrated with a Micro-Lightplate for Low-Power NO Gas Detection.
Sensors (Basel)
January 2025
Institute of Physics, University of Tartu, EE-50411 Tartu, Estonia.
Low-power gas sensors that can be used in IoT (Internet of Things) systems, consumer devices, and point-of-care devices will enable new applications in environmental monitoring and health protection. We fabricated a monolithic chemiresistive gas sensor by integrating a micro-lightplate with a 2D sensing material composed of single-layer graphene and monolayer-thick TiO. Applying ultraviolet (380 nm) light with quantum energy above the TiO bandgap effectively enhanced the sensor responses.
View Article and Find Full Text PDFSimulation of Normally-Off Vertical GaN MOSFET with a Novel Enhanced Sidewall Channel by Selective Area Growth.
Micromachines (Basel)
January 2025
School of Automation and Electrical Engineering, Shenyang Ligong University, Shenyang 110159, China.
In the present study, a novel normally-off vertical GaN MOSFET with an enhanced AlGaN/GaN channel on the sidewall has been proposed using the technology computer-aided design (TCAD) simulation. By using the selective area growth process, the trench structure and the enhanced sidewall channel are formed simultaneously, which is beneficial to enhance the conduction capability compared with the conventional trenched MOSFET. It demonstrates that a proper hole concentration and thickness of the p-GaN layer are key parameters to balance the threshold voltage, on-state resistance, and off-state breakdown voltage, resulting in the highest Baliga's figure of merit value.
View Article and Find Full Text PDFDesigns of Charge-Balanced Edge Termination Structures for 3.3 kV SiC Power Devices Using PN Multi-Epitaxial Layers.
Micromachines (Basel)
December 2024
School of Electrical and Electronic Engineering, Pusan National University, Busan 46241, Republic of Korea.
We demonstrated 3.3 kV silicon carbide (SiC) PiN diodes using a trenched ring-assisted junction termination extension (TRA-JTE) with PN multi-epitaxial layers. Multiple P rings and width-modulated multiple trenches were utilized to alleviate electric-field crowding at the edges of the junction to quantitively control the effective charge (Q) in the termination structures.
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