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Unveiling a Tunable Moiré Bandgap in Bilayer Graphene/hBN Device by Angle-Resolved Photoemission Spectroscopy.
Adv Sci (Weinh)
January 2025
School of Physical Science and Technology, ShanghaiTech Laboratory for Topological Physics, ShanghaiTech University, Shanghai, 201210, P. R. China.
Over the years, great efforts have been devoted in introducing a sizable and tunable band gap in graphene for its potential application in next-generation electronic devices. The primary challenge in modulating this gap has been the absence of a direct method for observing changes of the band gap in momentum space. In this study, advanced spatial- and angle-resolved photoemission spectroscopy technique is employed to directly visualize the gap formation in bilayer graphene, modulated by both displacement fields and moiré potentials.
View Article and Find Full Text PDFInteger Charge Transfer Model-PTCDA on MgO(001)/Ag(001) Probing the Transition from Single to Double Integer Charge Transfer.
J Phys Chem C Nanomater Interfaces
January 2025
Institute of Physics, NAWI Graz, University of Graz, Universitätsplatz 5, 8010 Graz, Austria.
For weakly interacting adsorbate/substrate systems, the integer charge transfer (ICT) model describes how charge transfer across interfaces depends on the substrate work function. In particular, work function regimes where no charge transfer occurs (vacuum level alignment) can be distinguished from regions where integer charge transfer by electron tunneling from substrate to adsorbate or vice versa takes place (Fermi level pinning). While the formation of singly integer charged molecular anions and cations of organic semiconductors on various substrates has been well described by this model, the double integer charging regime has so far remained unexplored and experimentally elusive.
View Article and Find Full Text PDFVisualization of spatial inhomogeneity in the superconducting gap using micro-ARPES.
Sci Technol Adv Mater
August 2024
Research Institute for Synchrotron Radiation Science (HiSOR), Hiroshima University, Higashi-Hiroshima, Japan.
Electronic inhomogeneity arises ubiquitously as a consequence of adjacent and/or competing multiple phases or orders in strongly correlated electron systems. Gap inhomogeneity in high- cuprate superconductors has been widely observed using scanning tunneling microscopy/spectroscopy. However, it has yet to be evaluated by angle-resolved photoemission spectroscopy (ARPES) due to the difficulty in achieving both high energy and spatial resolutions.
View Article and Find Full Text PDFVarious Configurations for Improving the Efficiency of Metallic and Superconducting Photocathodes Prepared by Pulsed Laser Deposition: A Comparative Review.
Materials (Basel)
October 2024
Laser Applications Centre, Asociación de Investigación Metalúrgica del Noroeste, 36410 Porriño, Spain.
This paper presents an innovative exploration of advanced configurations for enhancing the efficiency of metallic and superconducting photocathodes (MPs and SCPs) produced via pulsed laser deposition (PLD). These photocathodes are critical for driving next-generation free-electron lasers (FELs) and plasma-based accelerators, both of which demand electron sources with improved quantum efficiency (QE) and electrical properties. Our approach compares three distinct photocathode configurations, namely: conventional, hybrid, and non-conventional, focusing on recent innovations.
View Article and Find Full Text PDFObservation of Highly Spin-Polarized Dangling Bond Surface States in Rare-Earth Pnictide Tellurides.
Adv Mater
January 2025
Songshan Lake Materials Laboratory, Dongguan, 523808, China.
To generate and manipulate spin-polarized electronic states in solids are crucial for modern spintronics. The textbook routes employ quantum well states or Shockley/topological type surface states whose spin degeneracy is lifted by strong spin-orbit coupling and inversion symmetry breaking at the surface/interface. The resultant spin polarization is usually truncated because of the intertwining between multiple orbitals.
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