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From 2D AgTe Monolayer to 1D AgTe Nanowires: Tellurium Concentration Modulated Structural and Electronic Properties Transformation.
Small Methods
December 2024
Faculty of Materials Science and Engineering, Kunming University of Science and Technology, No. 68 Wenchang Road, Kunming, 650093, China.
Controllably modulating the structure of transition-metal chalcogenides (TMCs) from 2D to 1D and tuning their electronic properties has drawn particular attention currently due to their remarkable properties and potential applications. In this work, by precisely controlling the chemical concentration of Te atoms, the transformation from the 2D honeycomb AgTe monolayer to high-quality and well-defined 1D AgTe nanowires on the Ag(111) substrate has been successfully achieved. The combination of scanning tunneling microscopy measurements and first-principles calculations has confirmed that the mechanism underlying the entire dimensional transformation lies in the directional movement of Ag atoms in the 2D AgTe monolayer regulated by the concentration of Te atoms.
View Article and Find Full Text PDFThe accelerated advancement of high-energy laser technology has resulted in an increased necessity for multifunctional laser protection. Herein, we present an investigation into a static visible and dynamic 1064 nm laser protection window. Through studying the photonic crystal energy band structure and topological interface state properties, both 66.
View Article and Find Full Text PDFSingle-crystalline metal-oxide dielectrics for top-gate 2D transistors.
Nature
August 2024
State Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, China.
Two-dimensional (2D) structures composed of atomically thin materials with high carrier mobility have been studied as candidates for future transistors. However, owing to the unavailability of suitable high-quality dielectrics, 2D field-effect transistors (FETs) cannot attain the full theoretical potential and advantages despite their superior physical and electrical properties. Here we demonstrate the fabrication of atomically thin single-crystalline AlO (c-AlO) as a high-quality top-gate dielectric in 2D FETs.
View Article and Find Full Text PDFProbing charge redistribution at the interface of self-assembled cyclo-P pentamers on Ag(111).
Nat Commun
August 2024
Department of Physics, University of Basel, Basel, Switzerland.
Phosphorus pentamers (cyclo-P) are unstable in nature but can be synthesized at the Ag(111) surface. Unlike monolayer black phosphorous, little is known about their electronic properties when in contact with metal electrodes, although this is crucial for future applications. Here, we characterize the atomic structure of cyclo-P assembled on Ag(111) using atomic force microscopy with functionalized tips and density functional theory.
View Article and Find Full Text PDFLow Barriers and Faster Electron/Ion Transport Rates through the GaO/MnCO Anode with a Heterojunction Structure for Lithium-Ion Batteries.
Langmuir
June 2024
Guangdong Provincial Engineering Technology Research Center for Low Carbon and Advanced Energy Materials, College of Semiconductor Science and Technology, South China Normal University, Foshan 528225, China.
Electrode stability can be controlled to a large extent by constructing suitable composite structures, in which the heterojunction structure can affect the transport of electrons and ions through the effect of the interface state, changed band gap width, and the electric field at the interface. As a promising electrode material, the Ga-based material has a conversion between solid and liquid phases in the electrochemical reaction process, which endows it with self-healing properties with the structure and morphology. Based on these, the GaO/MnCO composite was successfully synthesized with a heterogeneous structure by introducing a Ga source in the hydrothermal process.
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