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Photoreflectance and contactless electroreflectance measurements of semiconductor structures by using bright and dark configurations.
Rev Sci Instrum
September 2009
Institute of Physics, Wrocław University of Technology, Poland.
Experimental setup for measurements of photoreflectance (PR) and contactless electroreflectance (CER) spectra in bright and dark configurations is described in this work and applied to study various semiconductor structures. The innovative solution in this setup is the possibility to measure PR and CER spectra in both experimental configurations with the same halogen lamp, monochromator, detector, and only very small modification in the optical path. In this setup the measurement conditions for the two experimental configurations are very similar, and the obtained PR and CER spectra can be compared and discussed in the context of the unwanted constant photovoltaic (PV) effect, which appears in the bright configuration when the sample is illuminated by the spectrum of white light instead of the monochromatic light.
View Article and Find Full Text PDFOptical characterization of a Cd(0.85)Mg(0.15)Se mixed crystal.
J Phys Condens Matter
July 2007
Department of Electronic Engineering, National Taiwan University of Science and Technology, Taipei 106, Taiwan.
We present an optical characterization of a Bridgman-grown wurtzite-type Cd(0.85)Mg(0.15)Se mixed crystal in the near-band-edge interband transitions using temperature-dependent contactless electroreflectance (CER) and photoreflectance (PR) in the temperature range 15-400 K.
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