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http://dx.doi.org/10.1103/physrevb.36.4748 | DOI Listing |
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January 2025
Key Lab of Photovoltaic and Energy Conservation Materials, Institute of Solid State Physics, HFIPS, Chinese Academy of Sciences, Hefei, 230031, P. R. China.
N-type BiTeSe(BTS) is a state-of-the-art thermoelectric material owing to its excellent thermoelectric properties near room temperatures for commercial applications. However, its performance is restricted by its comparatively low figure of merit ZT. Here, it is shown that a 14% increase in power factor (PF) (at 300 K) can be reached through incorporation of inorganic GaAs nanoparticles due to enhanced thermopower originating from the energy-dependent carrier scattering.
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January 2025
Faculty of Materials Science and Engineering, Phenikaa University, Hanoi 12116, Viet Nam.
Cupric oxide (CuO) is a promising p-type semiconducting oxide used in many critical fields, such as energy conversion and storage, and gas sensors, which is attributed to its unique optoelectrical properties and cost-effectiveness. This work successfully deposited amorphous, pinhole-free, ultrathin CuO films using atmospheric pressure spatial atomic layer deposition (SALD) with copper(II) acetylacetonate and ozone as precursors. The growth rate increased from 0.
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January 2025
Department of Physics, Government General Degree College Gopiballavpur-II, Jhargram 721517, India.
Effective engineering of nanostructured materials provides a scope to explore the underlying photoelectric phenomenon completely. A simple cost-effective chemical reduction route is taken to grow nanoparticles of Cd Zn S with varying = 1, 0.7, 0.
View Article and Find Full Text PDFJ Am Chem Soc
January 2025
Department of Chemistry, University of Wisconsin-Madison, Madison, Wisconsin 53706, United States.
Photoelectrochemical cells (PECs) can directly utilize solar energy to drive chemical reactions to produce fuels and chemicals. Oxide-based photoelectrodes in general exhibit enhanced stability against photocorrosion, which is a critical advantage for building a sustainable PEC. However, most oxide-based semiconductors are n-type, and p-type oxides that can be used as photocathodes are limited.
View Article and Find Full Text PDFACS Appl Mater Interfaces
January 2025
School of Materials and Energy, Lanzhou University (LZU), Lanzhou 730000, China.
Complementary neural network circuits combining multifunctional high-performance p-type with n-type organic artificial synapses satisfy sophisticated applications such as image cognition and prosthesis control. However, implementing the dual-modal memory features that are both volatile and nonvolatile in a synaptic transistor is challenging. Herein, for the first time, we propose a single vertical n-type organic synaptic transistor (VNOST) with a novel polymeric organic mixed ionic-electronic conductor as the core channel material to achieve dual-modal synaptic learning/memory behaviors at different operating current densities via the formation of an electric double layer and the reversible ion doping.
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