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HgTe/CdTe superlattices (SLs), have emerged as unprecedented materials with tremendous functionalities, such as solar photocell devices. We carried out first-principles analyses in the framework of the full-potential linearized augmented plane wave (FP-LAPW) scheme to understand the impact of layer periodicity and strain on HgTe/CdTe superlattices. This technique allows us to describe the electronic and optical features of low dimensional systems, such as CdTe-HgTe heterojunctions.
View Article and Find Full Text PDFThis paper is dedicated to the 83th Birthday of Late Professor B. R. Nag, D.
View Article and Find Full Text PDFIntrinsic spin hall effect induced by quantum phase transition in HgCdTe quantum wells.
Phys Rev Lett
February 2008
State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, 100083, Beijing, China.
The spin Hall effect can be induced by both extrinsic impurity scattering and intrinsic spin-orbit coupling in the electronic structure. The HgTe/CdTe quantum well has a quantum phase transition where the electronic structure changes from normal to inverted. We show that the intrinsic spin Hall effect of the conduction band vanishes on the normal side, while it is finite on the inverted side.
View Article and Find Full Text PDFSemimetallic InAs/Ga1-xInxSb superlattices with HgTe/CdTe-like band structures.
Phys Rev B Condens Matter
January 1994
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