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Design of antiferroelectric polarization configuration for ultrahigh capacitive energy storage via increasing entropy.
Nat Commun
January 2025
Beijing Advanced Innovation Center for Materials Genome Engineering, Department of Physical Chemistry, University of Science and Technology Beijing, Beijing, China.
Electric field induced antiferroelectric-ferroelectric phase transition is a double-edged sword for energy storage properties, which not only offers a congenital superiority with substantial energy storage density but also poses significant challenges such as large polarization hysteresis and poor efficiency, deteriorating the operation and service life of capacitors. Here, entropy increase effect is utilized to simultaneously break the long-range antiferroelectric order and locally adjust the fourfold commensurate modulated polarization configuration, leading to a breakthrough in the trade-off between recoverable energy storge density (14.8 J cm) and efficiency (90.
View Article and Find Full Text PDFProbing quantum floating phases in Rydberg atom arrays.
Nat Commun
January 2025
Department of Physics and Astronomy, University of California, Riverside, CA, USA.
The floating phase, a critical incommensurate phase, has been theoretically predicted as a potential intermediate phase between crystalline ordered and disordered phases. In this study, we investigate the different quantum phases that arise in ladder arrays comprising up to 92 neutral-atom qubits and experimentally observe the emergence of the quantum floating phase. We analyze the site-resolved Rydberg state densities and the distribution of state occurrences.
View Article and Find Full Text PDFRemarkable flexibility in freestanding single-crystalline antiferroelectric PbZrO membranes.
Nat Commun
May 2024
State Key Laboratory for Manufacturing Systems Engineering, Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education, School of Electronic Science and Engineering, Xi'an Jiaotong University, Xi'an, 710049, China.
The ultrahigh flexibility and elasticity achieved in freestanding single-crystalline ferroelectric oxide membranes have attracted much attention recently. However, for antiferroelectric oxides, the flexibility limit and fundamental mechanism in their freestanding membranes are still not explored clearly. Here, we successfully fabricate freestanding single-crystalline PbZrO membranes by a water-soluble sacrificial layer technique.
View Article and Find Full Text PDFProbing Interlayer Interactions and Commensurate-Incommensurate Transition in Twisted Bilayer Graphene through Raman Spectroscopy.
ACS Nano
February 2024
Materials Science Centre, Indian Institute of Technology, Kharagpur, West Bengal 721302, India.
Twisted 2D layered materials have garnered much attention recently as a class of 2D materials whose interlayer interactions and electronic properties are dictated by the relative rotation/twist angle between the adjacent layers. In this work, we explore a prototype of such a twisted 2D system, artificially stacked twisted bilayer graphene (TBLG), where we probe, using Raman spectroscopy, the changes in the interlayer interactions and electron-phonon scattering pathways as the twist angle is varied from 0° to 30°. The long-range Moiré potential of the superlattice gives rise to additional intravalley and intervalley scattering of the electrons in TBLG, which has been investigated through their Raman signatures.
View Article and Find Full Text PDFRegulating interfacial thermal conductance with commensurate-incommensurate transitions at atomic-scale silicon/silicon interfaces.
Nanoscale
February 2024
School of Mechanical and Electrical Engineering, Lanzhou University of Technology, Lanzhou, 730050, China.
Interfacial thermal conductance (ITC) between two contact surfaces is an important factor in accurately measuring energy transfer and heat dissipation at the interface; however, it is still not fully resolved how to more effectively modulate the ITC and unravel the related inner mechanisms. In this study, the contribution of commensurability and normal load to ITC at the atomic-scale silicon/silicon interface is disclosed. The results manifest that the ITC gradually reduces with the transition from commensurability to incommensurability.
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