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http://dx.doi.org/10.1103/physreva.53.4120 | DOI Listing |
ACS Appl Mater Interfaces
March 2025
Leiden Institute of Chemistry, Universiteit Leiden, PO Box 9502, Leiden 2300 RA, Netherlands.
Schottky diodes have been a fundamental component of electrical circuits for many decades, and intense research continues to this day on planar materials with increasingly exotic compounds. With the birth of nanotechnology, a paradigm shift occurred with Schottky contacts proving to be essential for enabling nanodevice inventions and increasing their performance by many orders of magnitude, particularly in the fields of piezotronics and piezoelectric energy harvesting. ZnO nanomaterials have proven to be the most popular materials in those devices as they possess high piezoelectric coefficients, high surface sensitivity, and low resistivity due to the high native n-type doping and low hole concentration.
View Article and Find Full Text PDFNanoscale Adv
February 2025
Xiamen Special Economic Zone Construction and Investment Group Co., Ltd China.
This study developed nitrate-intercalated layered double hydroxides (NO-LDHs) and their core-shell composites (NO-LDHs@MMT) through an co-precipitation method with montmorillonite (MMT). The corrosion inhibition performance for Q235 steel in simulated concrete pore solutions (saturated Ca(OH) + 3.5 wt% NaCl) was systematically investigated.
View Article and Find Full Text PDFSci Rep
March 2025
Department of Physics, TU Dortmund University, Otto-Hahn-Str. 4a, 44227, Dortmund, Germany.
We report on the structural and chemical evolution of submonolayer [Formula: see text] on [Formula: see text] up to the formation of the striped [Formula: see text] surface alloy. Using Low-Energy Electron Diffraction (LEED) and Scanning Tunneling Microscopy (STM), we identify a previously unobserved hexagonal [Formula: see text]-reconstruction at a [Formula: see text] film thickness of [Formula: see text] monolayers (ML). X-ray Photoelectron Spectroscopy (XPS) analysis reveals that the [Formula: see text]-structure is not chemically bonded to the [Formula: see text] substrate.
View Article and Find Full Text PDFSci Rep
March 2025
SPEC, CEA, CNRS, , Université Paris-Saclay, CEA Saclay, Gif-sur-Yvette, 91191, France.
We present a fundamental study of the band alignment at the interface of HfZrO (HZO) with Ge-doped GaO. Ge is an alternative n-type dopant for the wide band gap GaO due to its shallow donor level and favorable MBE growth conditions. In the perspective of using the ferroelectric polarization of hafnia based oxides, we have used a stack of HZO on highly Ge doped GaO, the latter providing high carrier density.
View Article and Find Full Text PDFJ Am Chem Soc
March 2025
School of Physical Science and Technology, Shanghai Key Laboratory of High-Resolution Electron Microscopy, State Key Laboratory of Advanced Medical Materials and Devices, ShanghaiTech University, Shanghai 201210, China.
Photoinduced proton transfer is an essential photochemical process for designing photocatalysts, white light emitters, bioimaging, and fluorescence sensing materials. However, deliberate control of the excited/ground states and meticulous manipulation of the excited state intramolecular proton transfer (ESIPT) pathway constitute a significant challenge in liquids and dense solids. Here, we present the integration of a hydronaphthoquinone fluorophore into a crystalline, porous, phototautomeric dynamic 3D covalent organic framework (COF) to show guest-induced fluorescence turn-on, emission redshift enhancement, and shortened lifetimes for ratiometric fluorescence humidity sensing.
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