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http://dx.doi.org/10.1103/physreva.32.1563 | DOI Listing |
Light Sci Appl
August 2024
Imaging Physics Department, Applied Science Faculty, Delft University of Technology, Lorentzweg 1, Delft, 2628 CJ, The Netherlands.
Ptychographic extreme ultraviolet (EUV) diffractive imaging has emerged as a promising candidate for the next generationmetrology solutions in the semiconductor industry, as it can image wafer samples in reflection geometry at the nanoscale. This technique has surged attention recently, owing to the significant progress in high-harmonic generation (HHG) EUV sources and advancements in both hardware and software for computation. In this study, a novel algorithm is introduced and tested, which enables wavelength-multiplexed reconstruction that enhances the measurement throughput and introduces data diversity, allowing the accurate characterisation of sample structures.
View Article and Find Full Text PDFPhys Rev E
February 2024
Shenzhen Key Laboratory of Ultraintense Laser and Advanced Material Technology, Center for Intense Laser Application Technology, and College of Engineering Physics, Shenzhen Technology University, Shenzhen 518118, People's Republic of China.
This paper presents a numeric study of the dynamic stabilization of the ablative Rayleigh-Taylor instability (ARTI) in the presence of a temporally modulated laser pulse. The results show that the specially modulated laser produces a dynamically stabilized configuration near the ablation front. The physical features of the relevant laser-driven parameters in the unperturbed ablative flows have been analyzed to reveal the inherent stability mechanism underlying the dynamically stabilized configuration.
View Article and Find Full Text PDFNature
February 2024
Institute of Physics, Swiss Federal Institute of Technology Lausanne (EPFL), Lausanne, Switzerland.
Proc Natl Acad Sci U S A
May 2023
Department of Applied Physics, Yale University, New Haven, CT 06520.
Emission dynamics of a multimode broadband interband semiconductor laser have been investigated experimentally and theoretically. Non-linear dynamics of a III-V semiconductor quantum well surface-emitting laser reveal the existence of a modulational instability, observed in the anomalous dispersion regime. An additional unstable region arises in the normal dispersion regime, owing to carrier dynamics, and has no analogy in systems with fast gain recovery.
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