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Polarization-Sensitive Solar-Blind Ultraviolet Photodetectors Based on Semipolar (112̅2) AlGaN Film.

ACS Appl Mater Interfaces

January 2025

Research and Development Center for Wide Bandgap Semiconductors, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China.

Wide bandgap semiconductor AlGaN alloys have been identified as key materials to fabricate solar-blind ultraviolet photodetectors (SBUV PDs). Herein, a self-driven SBUV polarization-sensitive PD (PSPD) based on semipolar (112̅2)-oriented AlGaN films is reported. Using the flow-rate modulation epitaxy method, the full widths at half maximum (FWHMs) for the obtained (112̅2) AlGaN along [112̅3̅] and [11̅00] rocking curves are 0.

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Elder mistreatment occurs in as many as one-half of the 11 million family care partnerships with persons living with Alzheimer's disease or related dementias (AD/ADRD) in the United States. is an 8-week psychoeducational intervention to prevent psychological mistreatment among family caregivers to persons living with dementia by building healthy caregiving relationships. The investigators conducted a single-arm pre- and posttest study to assess 's feasibility.

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Tailgut cyst is an exceedingly rare congenital anomaly originating from embryonic remnants of the tailgut. Owing to its asymptomatic nature in the early stages, it is prone to clinical misdiagnosis. We present a case of a 55-year-old female with initial symptoms manifesting as sacrococcygeal pain.

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Experimental unified pH scale in 1,2-dichloroethane.

Phys Chem Chem Phys

January 2025

Institute of Chemistry, University of Tartu (UT), Ravila Street 14a, 50411 Tartu, Estonia.

Experimental potentiometric unified pH (pH) scale is presented in 1,2-dichloroethane (1,2-DCE). The scale was compiled using differential potentiometric measurements, carried out by pair-wise comparisons between solutions. Aqueous standard buffer solutions were used as anchor points, so that the obtained pH values are linked to (, are traceable to) the conventional aqueous pH scale and are expressed as values.

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Au-In Alloy for Excellent Ohmic Contact in GeSe Devices with Enhanced Photodetector Properties.

ACS Appl Mater Interfaces

January 2025

Key Laboratory of MEMS of Ministry of Education, School of Integrated Circuits, Southeast University, Nanjing 210096, China.

Metal-semiconductor contact plays a significant role in devices such as transistors, photoemitters, and photodetectors. Here, the AuIn alloy contact gives a state-of-the-art low (contact resistance) in GeSe devices. The of GeSe-AuIn is measured to be 25 kΩ μm under channel carrier concentration around = 2.

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