The quantum-confined Stark effect in single cadmium selenide (CdSe) nanocrystallite quantum dots was studied. The electric field dependence of the single-dot spectrum is characterized by a highly polarizable excited state ( approximately 10(5) cubic angstroms, compared to typical molecular values of order 10 to 100 cubic angstroms), in the presence of randomly oriented local electric fields that change over time. These local fields result in spontaneous spectral diffusion and contribute to ensemble inhomogeneous broadening. Stark shifts of the lowest excited state more than two orders of magnitude larger than the linewidth were observed, suggesting the potential use of these dots in electro-optic modulation devices.
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http://dx.doi.org/10.1126/science.278.5346.2114 | DOI Listing |
Nanophotonics
April 2024
Department of Physics and Electronics, Osaka Metropolitan University, Gakuen-cho, Naka-ku, Sakai-shi, Osaka 599-8531, Japan.
Light-emitting diodes (LEDs) are widely used as next-generation light sources because of their various advantages. However, their luminous efficiency is remarkably low at the green-emission wavelength. The luminous efficiencies of InGaN/GaN quantum wells (QWs) significantly decrease with increasing indium content in the green wavelength region, mainly owing to the quantum-confined Stark effect (QCSE).
View Article and Find Full Text PDFACS Nano
October 2024
Department of Applied Physics, The Hebrew University of Jerusalem, Jerusalem 9190401, Israel.
Efficient charge separation is essential in various optoelectronic systems, yet it continues to pose substantial challenges. Building upon the recent evidence that chiral biomolecules can function as electron spin filters, this study aims to extend the application of chirality-driven charge separation from the molecular level to the mesoscale and supramolecular scale. Utilizing cellulose nanocrystals (CNCs) derived from cellulose, the most abundant biomaterial on Earth, this research leverages their self-assembly into chiral nematic structures and their dielectric properties.
View Article and Find Full Text PDFNano Lett
October 2024
Department of Electrical Engineering and Computer Science, University of Michigan, 1301 Beal Avenue, Ann Arbor, Michigan 48109, United States.
ACS Nano
October 2024
Centre Energie, Matériaux et Télécommunications, Institut national de la recherche scientifique (INRS-EMT), Varennes, Québec J3X 1P7, Canada.
Ultra-dense (>4,000 pixels per inch) and highly stable full-color III-nitride nanoscale pixels are crucial for near-eye display technologies like virtual and augmented-reality glasses. In this context, InGaN-based long wavelength green microscale light-emitting diodes face major bottlenecks, such as low efficiency and inadequate wavelength stability. These challenges are associated with the presence of both nonradiative surface defects and the strain induced quantum-confined Stark effect.
View Article and Find Full Text PDFMicrosyst Nanoeng
August 2024
Center for Photonics and Semiconductors, School of Power and Mechanical Engineering, Wuhan University, Wuhan, 430072 China.
AlGaN-based light-emitting diodes (LEDs) operating in the deep-ultraviolet (DUV) spectral range (210-280 nm) have demonstrated potential applications in physical sterilization. However, the poor external quantum efficiency (EQE) hinders further advances in the emission performance of AlGaN-based DUV LEDs. Here, we demonstrate the performance of 270-nm AlGaN-based DUV LEDs beyond the state-of-the-art by exploiting the innovative combination of bandgap engineering and device craft.
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