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Electrical Characteristics of CMOS-Compatible SiO-Based Resistive-Switching Devices.
Nanomaterials (Basel)
July 2023
Division of Electronics and Electrical Engineering, Dongguk University, Seoul 04620, Republic of Korea.
The electrical characteristics and resistive switching properties of memristive devices have been studied in a wide temperature range. The insulator and electrode materials of these devices (silicon oxide and titanium nitride, respectively) are fully compatible with conventional complementary metal-oxide-semiconductor (CMOS) fabrication processes. Silicon oxide is also obtained through the low-temperature chemical vapor deposition method.
View Article and Find Full Text PDFAnalog and Digital Bipolar Resistive Switching in Solution-Combustion-Processed NiO Memristor.
ACS Appl Mater Interfaces
July 2018
State Key Laboratory of Optoelectronic Materials and Technologies, School of Electronics and Information Technology , Sun Yat-Sen University, Guangzhou , Guangdong 510275 , China.
In this study, a NiO-based resistive memristor was manufactured using a solution combustion method. In this device, both analog and digital bipolar resistive switching were observed. They are dependent on the stressed bias voltage.
View Article and Find Full Text PDFThis paper presents a bidirectional brain machine interface (BMI) microsystem designed for closed-loop neuroscience research, especially experiments in freely behaving animals. The system-on-chip (SoC) consists of 16-channel neural recording front-ends, neural feature extraction units, 16-channel programmable neural stimulator back-ends, in-channel programmable closed-loop controllers, global analog-digital converters (ADC), and peripheral circuits. The proposed neural feature extraction units includes 1) an ultra low-power neural energy extraction unit enabling a 64-step natural logarithmic domain frequency tuning, and 2) a current-mode action potential (AP) detection unit with time-amplitude window discriminator.
View Article and Find Full Text PDFLip competence in Class III patients undergoing orthognathic surgery: an electromyographic study.
J Oral Maxillofac Surg
May 2012
Clínica Integral del Adulto, Facultad de Odontología, Universidad de Chile, Santiago, Chile.
Purpose: The aim of this study was to compare the presurgical and postsurgical electromyographic (EMG) activities of the lips in patients with skeletal Class III treated with combined orthognathic surgery and contrast these data with those obtained from a control group with skeletal Class I.
Patients And Methods: Ten patients with skeletal Class III underwent the registration of EMG activity before an orthognathic surgical procedure and 4 months after surgery. The results were compared with a control group of 11 healthy patients with skeletal Class I and clinical and EMG lip competence.
A novel approach to surface electromyography: an exploratory study of electrode-pair selection based on signal characteristics.
J Neuroeng Rehabil
April 2012
The Ottawa Hospital Rehabilitation Centre, and Department of Systems and Computer Engineering, Carleton University, 505 Smyth Road, Ottawa, ON, K1H8M2, Canada.
A 3×4 electrode array was placed over each of seven muscles and surface electromyography (sEMG) data were collected during isometric contractions. For each array, nine bipolar electrode pairs were formed off-line and sEMG parameters were calculated and evaluated based on repeatability across trials and comparison to an anatomically placed electrode pair. The use of time-domain parameters for the selection of an electrode pair from within a grid-like array may improve upon existing electrode placement methodologies.
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