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The BeP monolayer exhibits ultra-high and highly anisotropic carrier mobility and 29.3% photovoltaic efficiency.
Nanoscale
January 2025
Laboratory of Quantum Functional Materials Design and Application, School of Physics and Electronic Engineering, Jiangsu Normal University, Xuzhou 221116, China.
Two-dimensional materials with a combination of a moderate bandgap, highly anisotropic carrier mobility, and a planar structure are highly desirable for nanoelectronic devices. This study predicts a planar BeP monolayer with hexagonal symmetry that meets the aforementioned desirable criteria using the CALYPSO method and first-principles calculations. Calculations of electronic properties demonstrate that the hexagonal BeP monolayer is an intrinsic semiconductor with a direct band gap of approximately 0.
View Article and Find Full Text PDFStudy of High Performance Nanoscale Channel Length Vertical Transistors with a Self-Aligned Blocking Layer.
ACS Appl Mater Interfaces
January 2025
Department of Electrical Engineering and Computer Science (EECS), Daegu Gyeongbuk Institute of Science and Technology (DGIST), Daegu 42988, Republic of Korea.
A transistor design employing all vertically stacked components has attracted considerable attention due to the simplicity of the fabrication process and the high conductivity easily realized by achieving nanolevel short channel lengths with two-dimensional current paths. However, fundamental issues, specifically the blocking of the gate electrical field to the semiconductive channel layer and high leakage current at the "off" state, have impeded this configuration in becoming a major transistor design. To address these issues, it has been proposed to introduce a blocking layer (BL) with embedded hole structures and source electrode with embedded hole structures, enhancing gate field penetration and carrier modulation.
View Article and Find Full Text PDFElectronic Impact of High-Energy Metal Deposition on Ultrathin Oxide Semiconductors.
Nano Lett
January 2025
Institute of Electronics, National Yang Ming Chiao Tung University, Hsinchu 300093, Taiwan.
High-energy metal deposition significantly impacts the performance and reliability of two-dimensional (2D) semiconductors and nanodevices. This study investigates the localized annealing effect in atomically thin InO induced during high-energy metal deposition. The localized heating effect alters the electronic performance of InO devices, especially in shorter channel devices, where heat dissipation is further constrained.
View Article and Find Full Text PDF3D active-matrix multimodal sensor arrays for independent detection of pressure and temperature.
Sci Adv
January 2025
Department of Convergence IT Engineering, Pohang University of Science and Technology, 77 Cheongam-Ro, Pohang 37673, Republic of Korea.
Pressure and temperature sensing simultaneously and independently is crucial for creating electronic skin that replicates complex sensory functions of human skin. Thin-film transistor (TFT) arrays with sensors have enabled cross-talk-free spatial sensing. However, the thermal dependence of charge transport in semiconductors has resulted in interference between thermal and pressure stimuli.
View Article and Find Full Text PDFNanoscale Structure and Interfacial Electrochemical Reactivity of Moiré-Engineered Atomic Layers.
Acc Chem Res
January 2025
Department of Chemistry, University of California, Berkeley, California 94720, United States.
ConspectusThe electronic properties of atomically thin van der Waals (vdW) materials can be precisely manipulated by vertically stacking them with a controlled offset (for example, a rotational offset─i.e., twist─between the layers, or a small difference in lattice constant) to generate moiré superlattices.
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