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http://dx.doi.org/10.1088/0022-3735/1/8/435 | DOI Listing |
Sensors (Basel)
August 2024
S.P. Kapitsa Research Institute of Technology, Ulyanovsk State University, 42 Leo Tolstoy Street, 432970 Ulyanovsk, Russia.
In this review, we summarize the latest advances in the design of optical frequency-domain reflectometers (OFDRs), digital signal processing, and sensors based on special optical fibers. We discuss state-of-the-art approaches to improving metrological characteristics, such as spatial resolution, SNR, dynamic range, and the accuracy of determining back reflection coefficients. We also analyze the latest achievements in the OFDR-based sensors: the accuracy of spatial localization of the impact, the error in detecting temperatures, deformation, and other quantities, and the features of separate measurement of various physical quantities.
View Article and Find Full Text PDFSci Rep
October 2023
Photonics Research Center, School of Optoelectronic Engineering and Instrumentation Science, Dalian University of Technology, Dalian, 116024, China.
Sci Rep
May 2023
National Institute of Laser Enhanced Sciences (NILES), Cairo University, Giza, Egypt.
In the work that is being presented here, the effect of sample thickness and laser irradiance on the reduction of the signal-to-background ratio SBG and the plasma parameters, specifically electron temperature and electron density, is being investigated using back-reflection-enhanced laser-induced breakdown spectroscopy (BRELIBS). Copper and silver discs that had been highly polished were attached to the back surface of the glass target, and the Nd-YAG laser beam that was focused on the front surface of the target was tuned to its fundamental wavelength. The thicknesses of the transparent glass samples that were analysed were 1 mm, 3 mm, and 6 mm.
View Article and Find Full Text PDFMid-infrared (mid-IR) silicon photonics has been attracting great attention due to its tremendous potential applications in nonlinear optics, ranging, sensing, and spectroscopy. To date, mid-IR silicon devices have usually been developed based on silicon wafers with top-layer silicon thicknesses of hundreds of nanometers. Compared with the thick silicon devices, tens-of-nanometers thin silicon devices can provide giant evanescent-field energy proportions and optical mode areas, being significant for many biochemical sensing and nonlinear optics applications.
View Article and Find Full Text PDFPolygon mirror scanners are attracting considerable interest owing to their rapid speed and large scanning area. Here, we focused on the back-reflection effect of the polygon scanner. A new polygon scanner system was designed based on a geometric analysis.
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