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Programmable Electromagnetic Wave Absorption via Tailored Metal Single Atom-Support Interactions.

Adv Mater

January 2025

Laboratory of Advanced Materials, Institute of Optoelectronics, Fudan University, Shanghai, 200438, P. R. China.

Metal single atoms (SA)-support interactions inherently exhibit significant electrochemical activity, demonstrating potential in energy catalysis. However, leveraging these interactions to modulate electronic properties and extend application fields is a formidable challenge, demanding in-depth understanding and quantitative control of atomic-scale interactions. Herein, in situ, off-axis electron holography technique is utilized to directly visualize the interactions between SAs and the graphene surface.

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Effect of Physiologically Relevant Dehydration on the Dielectric Properties of Ground Beef.

Bioelectromagnetics

January 2025

Department of Electrical and Software Engineering, University of Calgary, Calgary, Alberta, Canada.

Readily available animal tissue, such as ground beef, is a convenient material to represent the dielectric properties of biological tissue when validating microwave imaging and sensing hardware and techniques. The reliable use of these materials depends on the accurate characterization of their properties. In this work, the effect of physiologically relevant levels of dehydration on ex vivo tissue samples is quantified while controlling for variation within and between samples.

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High dielectric constants with less dielectric loss composites is highly demandable for technological advancements across various fields, including energy storage, sensing, and telecommunications. Their significance lies in their ability to enhance the performance and efficiency of a wide range of devices and systems. In this work, the dielectric performance of graphene oxide (GO) reinforced plasticized starch (PS) nanocomposites (PS/GO) for different concentrations of GO nanofiller was studied.

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Different temperatures leakage mechanisms of (AlO)(HfO) gate Dielectrics deposited by atomic layer deposition.

Sci Rep

January 2025

Wide Bandgap Semiconductor Technology Disciplines State Key Laboratory, Xidian University, Xi'an, 710071, China.

(AlO)(HfO) films with varying compositions were deposited on silicon substrates via plasma-enhanced atomic layer deposition (PEALD), and metal-oxide-semiconductor (MOS) capacitors were fabricated. The impact of varying induced Al content on the dielectric properties of HfO was examined through electrical measurements. The results showed that increasing Al content raised the flat-band voltage, reduced the interface state density (D), and significantly lowered the leakage current at a given voltage.

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Understanding and controlling the electronic properties of two-dimensional materials are crucial for their potential applications in nano- and optoelectronics. Monolayer transition metal dichalcogenides have garnered significant interest due to their strong light-matter interaction and extreme sensitivity of the band structure to the presence of photogenerated electron-hole pairs. In this study, we investigate the transient electronic structure of monolayer WS on a graphene substrate after resonant excitation of the A-exciton using time- and angle-resolved photoemission spectroscopy.

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