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Green materials in semiconductors: perspective from the IRDS Beyond-CMOS roadmap.
Nanotechnology
January 2025
IBM research, 650 Harry Road, San Jose, California, 95120, UNITED STATES.
Environmental, Safety, Health, and Sustainability (ESHS) have become an indispensable issue in the semiconductor industry. The "Beyond CMOS" chapter of the International Roadmap for Devices and Systems(IRDS) roadmap introduces the concept of "Green materials", emphasizing their importance for maintaining sustainability in semiconductor manufacturing. We discuss the current trends of emerging architectures and devices in the perspective of "Green materials".
View Article and Find Full Text PDFThe Research Agenda for Perinatal Innovation and Digital Health Project: Human-Centered Approach to Multipartner Research Agenda Codevelopment.
JMIR Hum Factors
January 2025
Women's Health Research Institute, Vancouver, BC, Canada.
Background: Digital health innovations provide an opportunity to improve access to care, information, and quality of care during the perinatal period, a critical period of health for mothers and infants. However, research to develop perinatal digital health solutions needs to be informed by actual patient and health system needs in order to optimize implementation, adoption, and sustainability.
Objective: Our aim was to co-design a research agenda with defined research priorities that reflected health system realities and patient needs.
Designing Health Recommender Systems to Promote Health Equity: A Socioecological Perspective.
J Med Internet Res
January 2025
Department High-Tech Business and Entrepreneurship Section, Industrial Engineering and Business Information Systems, University of Twente, Enschede, Overijssel, Netherlands.
Health recommender systems (HRS) have the capability to improve human-centered care and prevention by personalizing content, such as health interventions or health information. HRS, an emerging and developing field, can play a unique role in the digital health field as they can offer relevant recommendations, not only based on what users themselves prefer and may be receptive to, but also using data about wider spheres of influence over human behavior, including peers, families, communities, and societies. We identify and discuss how HRS could play a unique role in decreasing health inequities.
View Article and Find Full Text PDFClozapine for Treatment-Resistant Disruptive Behaviors in Youths With Autism Spectrum Disorder Aged 10-17 Years: Protocol for an Open-Label Trial.
JMIR Res Protoc
January 2025
Graduate Program of Psychiatry and Behavioral Sciences, Department of Psychiatry, Federal University of Rio Grande do Sul (UFRGS), Porto Alegre, Brazil.
Background: Autism Spectrum Disorder (ASD) is a complex neurodevelopmental condition emerging in early childhood, characterized by core features such as sociocommunicative deficits and repetitive, rigid behaviors, interests, and activities. In addition to these, disruptive behaviors (DB), including aggression, self-injury, and severe tantrums, are frequently observed in pediatric patients with ASD. The atypical antipsychotics risperidone and aripiprazole, currently the only Food and Drug Administration-approved treatments for severe DB in patients with ASD, often encounter therapeutic failure or intolerance.
View Article and Find Full Text PDFHigh Areal Loading Silicon Nanoparticle-Based Lithium-Ion Batteries.
ACS Appl Mater Interfaces
January 2025
Electrical & Computer Engineering Department, Montana State University, Bozeman, Montana 59717, United States.
Interfacial mechanical stability between silicon (Si) and the current collector is crucial when high areal-loading of Si is demanded as intense stress develops at the interface due to its extreme volume alteration during the lithiation-delithiation process. Therefore, we propose using a thin, rough, porous, and highly conductive carbon nanotube network (CNT-N) as a buffer layer between the Si and current collector that provides abundant anchor sites for Si nanoparticles. The strong and elastic CNT-N, which is not involved directly in the lithiation process, reduces stress at interfaces between the Si and CNT-N and the CNT-N and current collector.
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