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Activating discharge and inhibiting self-corrosion by adding indium to the anode of Mg-air battery.
Nanoscale
January 2025
College of Materials Science and Engineering, Taiyuan University of Technology, Taiyuan, 030024, Shanxi, China.
Self-corrosion and low practical voltage of anodes severely limit the usage of Mg-air batteries. Although many elements, including indium (In), have been used to enhance the discharge characteristics of Mg anodes, unclear mechanism of the action of a single element and lack of research on binary alloys as anodes have restricted the development of Mg-air batteries. Herein, Mg-In ( = 0.
View Article and Find Full Text PDFRadiative Warming Glass for High-Latitude Cold Regions.
Adv Sci (Weinh)
January 2025
Department of Electronic Engineering, The Chinese University of Hong Kong, Shatin, New Territories, Hong Kong SAR, 999077, China.
Traditional window glazing, with inherently adverse energy-efficient optical properties, leads to colossal energy losses. Energy-saving glass requires a customized optical design for different climate zones. Compared with the widely researched radiative cooling technology which is preferable to be used in low-altitude hot regions; conversely in high-latitude cold regions, high solar transmittance (T) and low mid-infrared thermal emissivity (ε) are the key characteristics of high-performance radiative warming window glass, while the current low-emissivity (low-e) glass is far from ideal.
View Article and Find Full Text PDFContact-Engineered Oxide Memtransistors for Homeostasis-Based High-Linearity and Precision Neuromorphic Computing.
Small
January 2025
School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon, 16419, Republic of Korea.
Homeostasis is essential in biological neural networks, optimizing information processing and experience-dependent learning by maintaining the balance of neuronal activity. However, conventional two-terminal memristors have limitations in implementing homeostatic functions due to the absence of global regulation ability. Here, three-terminal oxide memtransistor-based homeostatic synapses are demonstrated to perform highly linear synaptic weight update and enhanced accuracy in neuromorphic computing.
View Article and Find Full Text PDFEndurable IGZO/SnS/IGZO Heterojunction Phototransistor Arrays for Image Sensors.
ACS Appl Mater Interfaces
January 2025
School of Electrical and Electronic Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul 03722, Republic of Korea.
Optoelectronic devices require stable operation to detect repetitive visual information. In this study, endurable arrays based on heterojunction phototransistors composed of indium-gallium-zinc oxide (IGZO) with a low dark current and tin sulfide (SnS) capable of absorbing visible light are developed for image sensors. The tandem structure of IGZO/SnS/IGZO (ISI) enables stable operation under repetitive exposure to visible light by improving the transport ability of the photoexcited carriers through mitigated trap sites and their separation into each IGZO layer.
View Article and Find Full Text PDFEffects of Surface Oxygen Vacancies and Hydroxy Groups on Electrical Characteristics in Solution-Gated One-Piece Indium-Tin-Oxide-Based Field-Effect Transistors.
Langmuir
January 2025
Department of Materials Engineering, School of Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan.
A solution-gated indium-tin-oxide (ITO)-based field effect transistor (FET) without interfaces among the source, channel, and drain electrodes, which is called the one-piece ITO-FET, can be simply fabricated from a single sheet of ITO by etching the channel region. The direct contact of the ITO channel surface with a sample solution contributes to a steep subthreshold slope and a high on/off ratio. In this study, we have examined the effects of oxygen vacancies and hydroxy groups at the ITO channel surface on the electrical characteristics of the one-piece ITO-FET.
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