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60Co gamma radiation effects on NPN transistor at cryogenic temperature.

Radiat Prot Dosimetry

July 2024

Department of Studies in Physics, University of Mysore, Manasagangotri, Mysuru 570006, India.

The 60Co gamma radiation effects on the DC electrical characteristics of silicon NPN transistor were studied in the dose range of 100 krad to 6 Mrad at room temperature (300 K) and cryogenic temperature (77 K). The measurements were carried out at both 300 and 77 K temperature. The electrical characteristics such as Gummel characteristics, excess base current (ΔIB), current gain (hFE), transconductance (gm) and output characteristics were studied in situ as a function of total dose.

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N-channel depletion metal oxide semiconductor field effect transistors (MOSFETs) were irradiated with 60Co gamma radiation in the dose range of 100 krad to 6 Mrad at cryogenic (77 K) and room temperatures (300 K). The MOS devices irradiated at 77 K and 300 K were characterized at 77 K and 300 K respectively. The different electrical parameters of MOSFET such as threshold voltage (Vth), density of interface trapped charges (ΔNit), density of oxide trapped charges (ΔNot) and mobility of the charge carriers (μ) were studied as a function of total dose.

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Background: Due to the wide application of the cone beam computed tomography (CBCT) in clinical practice, it is important to assess radiation dose of CBCT more accurately and efficiently in different clinical applications.

Objective: This study aims to calculate effective and absorbed doses in CBCT measured in an anthropomorphic phantom using computer-based Monte Carlo (PCXMC) software, and to conduct comparative evaluations of MOSFET (metal- oxide- semiconductor field-effect transistor) and radiophotoluminescence glass dosimeters (RPLGD).

Methods: Effective and absorbed organ doses are compared with those obtained using MOSFET and RPLGD dosimetry in an anthropomorphic phantom given the same exposure settings.

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Dupuytren's contracture (DC) and Ledderhose disease (LD) are benign conditions of the fascia in the hands and feet respectively, which result in contracture of the digits. Radiation therapy has been proven effective in treating early-stage DC and LD; however, the problem is that there is a paucity of literature regarding radiation therapy treatment set-up for Dupuytren's and Ledderhose patients. The purpose of this case study was to demonstrate treatment set-up considerations of 6 and 9 MeV for DC and LD cases in radiotherapy (RT).

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General Purpose Transistor Characterized as Dosimetry Sensor of Proton Beams.

Sensors (Basel)

April 2023

ECSens, Imuds, Department of Electronics and Computer Technology, ETSIIT, University of Granada, 18014 Granada, Spain.

A commercial pMOS transistor (MOSFET), 3N163 from Vishay (USA), has been characterized as a low-energy proton beam dosimeter. The top of the samples' housing has been removed to guarantee that protons reached the sensitive area, that is, the silicon die. Irradiations took place at the National Accelerator Centre (Seville, Spain).

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