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Realizing spin-orbit torque (SOT)-driven magnetization switching offers promising opportunities for the advancement of next-generation spintronics. However, the relatively low charge-spin conversion efficiency accompanied by an ultrahigh critical switching current density () remains a significant obstacle to the further development of SOT-based storage elements. Herein, spin absorption engineering at the ferromagnet/nonmagnet interface is firstly proposed to achieve high SOT efficiency in Pt/Co/Ir trilayers.

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