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Dramatic switchable polarities in conduction type and self-driven photocurrent of BiI via pressure engineering.
Natl Sci Rev
January 2025
State Key Laboratory of Superhard Materials, Jilin University, Changchun 130012, China.
The intentional manipulation of carrier characteristics serves as a fundamental principle underlying various energy-related and optoelectronic semiconductor technologies. However, achieving switchable and reversible control of the polarity within a single material to design optimized devices remains a significant challenge. Herein, we successfully achieved dramatic reversible p-n switching during the semiconductor‒semiconductor phase transition in BiI via pressure, accompanied by a substantial improvement in their photoelectric properties.
View Article and Find Full Text PDFPrecise Control of Efficient Phosphorescence in Host-Guest Doping Systems via Dynamic Metal-Ligand Coordination.
J Phys Chem Lett
January 2025
College of Chemistry and Materials Engineering, Wenzhou University, Wenzhou 325035, China.
Organic room-temperature phosphorescent (RTP) materials have wide-ranging applications in anticounterfeiting, biodiagnostics, and optoelectronic devices due to their unique properties. However, it remains a challenge to give organic RTP materials dynamic tunability to satisfy the demands of various advanced applications. Herein, we propose an effective strategy to precisely modulate phosphorescent performance by incorporating dynamic metal-ligand coordination within a host-guest doped system.
View Article and Find Full Text PDFCrystallization control of Cu(I)-halide thermal evaporation for improving resistive switching memory performance.
Nanoscale
January 2025
School of Advanced Materials Science & Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea.
CsCuI is considered a promising material for lead-free resistive switching (RS) memory devices due to its low operating voltage, high on/off ratio, and excellent thermal and environmental stability. However, conventional lead-free halide-based RS memory devices typically require solvent-based thin-film formation processes that involve toxic organic and acidic solvents, and the effects of process conditions on device performance are often not fully understood. This study investigates the effect of crystallinity on CsCuI-based RS memory devices fabricated thermal evaporation.
View Article and Find Full Text PDFIncreased Brightness and Reduced Efficiency Droop in Perovskite Quantum Dot Light-Emitting Diodes Using Carbazole-Based Phosphonic Acid Interface Modifiers.
ACS Nano
January 2025
Department of Chemistry, University of Washington, Seattle, Washington 98195, United States.
We demonstrate the use of [2-(9-carbazol-9-yl)ethyl]phosphonic acid (2PACz) and [2-(3,6-di--butyl-9-carbazol-9-yl)ethyl]phosphonic acid (-Bu-2PACz) as anode modification layers in metal-halide perovskite quantum dot light-emitting diodes (QLEDs). Compared to conventional QLED structures with PEDOT:PSS (poly(3,4-ethylenedioxythiophene) polystyrenesulfonate)/PVK (poly(9-vinylcarbazole)) hole-transport layers, the QLEDs made with phosphonic acid (PA)-modified indium tin oxide (ITO) anodes show an over seven-fold increase in brightness, achieving a brightness of 373,000 cd m, one of the highest brightnesses reported to date for colloidal perovskite QLEDs. Importantly, the onset of efficiency roll-off, or efficiency droop, occurs at ∼1000-fold higher current density for QLEDs made with PA-modified anodes compared to control QLEDs made with conventional PEDOT:PSS/PVK hole transport layers, allowing the devices to sustain significantly higher levels of external quantum efficiency at a brightness of >10 cd m.
View Article and Find Full Text PDFPlasma-Enhanced Grain Growth and Non-Radiative Recombination Mitigation in CsSnBr Perovskite Films for High-Performance, Lead-Free Photodetectors.
Small
January 2025
Department of Physics, Department of Materials Science and Engineering, and Department of Biomedical Engineering, City University of Hong Kong, Tat Chee Avenue, Kowloon, Hong Kong, 999077, China.
Tin-based halide perovskites represent a highly promising and eco-friendly alternative to lead-based materials with significant potential for optoelectronic applications. However, their advancement is hampered by challenges such as poor film crystallinity and unintended self-doping. Herein, this work reports the fabrication of high-quality CsSnBr perovskite films by plasma-assisted chemical vapor deposition (PACVD), which improves the film quality.
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