BiTe recently emerges as a promising candidate material for the next generation of mid-wave to long-wave infrared photodetection owing to its exceptionally narrow bandgap (approximately 0.2 eV) and the favorable photoelectronic properties. In particular, its topological insulator structure is safeguarded by time-reversal symmetry, leading to electronic structures with distinct surface and bulk states as well as distinctive optoelectronic properties. This study examines the infrared detection mechanism of BiTe across various thicknesses, aiming to elucidate the transport behavior and characteristics of internal carriers in BiTe under the complex interplay between the bulk state and surface states. BiTe films at various thicknesses were synthesized pulsed laser deposition with varied number of pulses which determines the actual thickness. The bandgap and the photoelectric response mechanism of BiTe at different layer thicknesses were investigated, and the charge carrier transport dynamics across layers were clarified. To summarize, this study offers a theoretical basis for advancing photoelectric detection devices designed to regulate BiTe at distinct thicknesses.
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