Low-Bandgap Ferroelectric -LuMnO Thin Films for Photovoltaic Applications.

Materials (Basel)

Centro de Química-Vila Real, CQ-VR, Chemistry Department, Escola de Ciências da Vida e do Ambiente (ECVA), University of Trás-os-Montes e Alto Douro, 5001-801 Vila Real, Portugal.

Published: February 2025

This work explores the deposition of hexagonal (-) LuMnO thin films in the phase and investigates the conditions under which the synergy of ferroelectric and photoactive properties, can be achieved to confirm the potential of this material for applications in the development of next-generation photovoltaic devices. Single-phase -LuMnO was successfully deposited on different substrates, and the thermal stability of the material was confirmed by Micro-Raman spectroscopy analysis from 77 to 850 K, revealing the suitable ferro- to para-electric transition near 760 K. Optical measurements confirm the relatively narrow band gap at 1.5 eV, which corresponds to the -LuMnO system. The presence of domain structures and the signature of hysteresis loops consistent with ferroelectric behaviour were confirmed by piezoresponse force microscopy. In addition, light-dependent photocurrent measurements revealed the photoactive sensitivity of the material.

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http://dx.doi.org/10.3390/ma18051058DOI Listing

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