The Effect of Hydrogen Annealing on the Electronic Conductivity of Al-Doped Zinc Oxide Thin Films.

In this research, Hall effect experiments and optical fittings were mainly conducted to elucidate the effect of hydrogen annealing on the electronic properties of polycrystalline Al-doped Zinc Oxide thin films by distinguishing the scattering by ion impurities and the scattering by grain boundaries. By comparing the carrier density and those mobilities of H-annealed samples with Ar-annealed samples, the effect of H annealing was highlighted. AZO thin films were prepared on the quartz glass substrate at R.T. by an RF magnetron sputtering method, and the carrier density was controlled by changing the number of Al chips on the Zn target. After fabricating them, they were post-annealed in hydrogen or argon gas. Optical fitting was based on the Drude model using the experimental data of Near-Infrared spectroscopy, and the mobility at grain boundaries was analyzed by Seto's theory. Other optical and crystalline properties were also checked by SEM, EDX, XRD and profilometer. It is indicated that the H annealing would improve both carrier density and mobility. The analysis referring to Seto's theory implied that the improvement of mobility was caused by the carrier generation from introduced hydrogen atoms both at the grain boundary and its intragrain region. Furthermore, the effect of H annealing is relatively pronounced especially in low-doped region, which implies that Al and H have some interaction in AZO thin film. The interaction between Al and H in AZO thin film is still not confirmed, but this result implied that this interaction negatively affects the mobility at grain boundary.