The electric control of magnetism has been considered to be promising for molecular spintronics and quantum information. However, the spin-electric coupling strength appears to be insufficient for application in most cases. Two major factors capable of amplifying the relative effect are spin-orbit coupling and ferroelectricity. Herein, we chose four compounds as examples to study the contribution of spin-orbit coupling and ferroelectricity to spin-electric coupling. The relative orientation-dependent Hamiltonian terms were determined via electric-field modulated continuous-wave electron paramagnetic resonance. The origins of the spin-electric coupling effect in the four compounds are discussed and determined according to the characteristics of the experimental spectra. Meanwhile, the results demonstrated that strong spin-orbit coupling is crucial for producing significant spin-electric coupling and that the effect can be amplified by about 2 orders of magnitude by ferroelectricity. This work can guide the rational screen and design of materials with applicable spin-electric coupling strength, which may provoke techniques including low-power spintronics and precise manipulation of the quantum behavior of spins.
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http://dx.doi.org/10.1021/jacs.4c17949 | DOI Listing |
J Am Chem Soc
March 2025
Spin-X Institute, School of Chemistry and Chemical Engineering, South China University of Technology, Guangzhou 511442, China.
The electric control of magnetism has been considered to be promising for molecular spintronics and quantum information. However, the spin-electric coupling strength appears to be insufficient for application in most cases. Two major factors capable of amplifying the relative effect are spin-orbit coupling and ferroelectricity.
View Article and Find Full Text PDFNat Commun
January 2025
Institut de Chimie de Strasbourg (UMR 7177, CNRS-Unistra), Université de Strasbourg, 4 rue Blaise Pascal, CS 90032, F-67081, Strasbourg, France.
Electric fields represent an ideal means for controlling spins at the nanoscale and, more specifically, for manipulating protected degrees of freedom in multispin systems. Here we perform low-temperature magnetic far-IR spectroscopy on a molecular spin triangle (Fe) and provide initial experimental evidence suggesting spin-electric transitions in polynuclear complexes. The co-presence of electric- and magnetic-dipole transitions, allows us to estimate the spin-electric coupling.
View Article and Find Full Text PDFJ Am Chem Soc
November 2024
National High Magnetic Field Lab, Los Alamos National Lab, Los Alamos, New Mexico 87545, United States.
Research on the magnetoelectric (ME) effect (or spin-electric coupling) in molecule-based magnetic materials is a relatively nascent but promising topic. Molecule-based magnetic materials have diverse magnetic functionalities that can be coupled to electrical properties. Here we investigate a realization of ME coupling that is fundamental but not heavily studied─the coupling of magnetic spin level crossings to changes in electric polarization.
View Article and Find Full Text PDFJ Am Chem Soc
September 2024
Department of Chemistry, The University of Manchester, Oxford Road, Manchester M13 9PL, U.K.
Current scalable quantum computers require large footprints and complex interconnections due to the design of superconducting qubits. While this architecture is competitive, molecular qubits offer a promising alternative due to their atomic scale and tuneable properties through chemical design. The use of electric fields to precisely, selectively and coherently manipulate molecular spins with resonant pulses has the potential to solve the experimental limitations of current molecular spin manipulation techniques such as electron paramagnetic resonance (EPR) spectroscopy.
View Article and Find Full Text PDFAdv Mater
October 2024
School of Physics, University of Melbourne, Parkville, Victoria, 3010, Australia.
Establishing connections between material impurities and charge transport properties in emerging electronic and quantum materials, such as wide-bandgap semiconductors, demands new diagnostic methods tailored to these unique systems. Many such materials host optically-active defect centers which offer a powerful in situ characterization system, but one that typically relies on the weak spin-electric field coupling to measure electronic phenomena. In this work, charge-state sensitive optical microscopy is combined with photoelectric detection of an array of nitrogen-vacancy (NV) centers to directly image the flow of charge carriers inside a diamond optoelectronic device, in 3D and with temporal resolution.
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