The backgrinding of silicon (Si) wafers has resulted in a loss of ∼70% of valuable Si materials. Consequently, an effluent known as diluted backgrinding wastewater (DBGW) is generated, containing nanosized silicon/silica colloids. Here, we discussed the challenges associated with the effective separation of Si-based waste from the DBGW based upon two perspectives, namely, a nanosized effect and a colloidal stability effect. Then, we revealed the limitation with the currently used coagulation-flocculation approach, which introduces impurities into the highly pure Si. Membrane-based filtration techniques have been adopted, but the serious fouling problem associated with colloidal Si/SiO renders them almost impractical. Apart from that, the potential use of highly pure Si waste generated in the semiconductor industry in lithium ion batteries (LIBs) has been discussed. This Perspective aims to provide insights into the challenges associated with the Si recovery from DBGW and suggests its potential use in LIBs.
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http://dx.doi.org/10.1021/acs.langmuir.4c03490 | DOI Listing |
Langmuir
March 2025
School of Chemical Engineering, Universiti Sains Malaysia, 14300 Nibong Tebal, Penang, Malaysia.
The backgrinding of silicon (Si) wafers has resulted in a loss of ∼70% of valuable Si materials. Consequently, an effluent known as diluted backgrinding wastewater (DBGW) is generated, containing nanosized silicon/silica colloids. Here, we discussed the challenges associated with the effective separation of Si-based waste from the DBGW based upon two perspectives, namely, a nanosized effect and a colloidal stability effect.
View Article and Find Full Text PDFACS Appl Mater Interfaces
March 2025
Department of Electronic Engineering, Hanyang University, Seoul 04763, South Korea.
While amorphous indium gallium zinc oxide (α-IGZO) thin film transistors (TFTs) are practical alternatives to silicon-based TFTs, their field-effect mobility (∼50 cm/(V s), depending on deposition conditions) remains insufficient to meet the growing demands of high-resolution active-matrix organic light-emitting diode (AMOLED) displays. The need for high-performance oxide TFTs with mobility ≥100 cm/(V s) has become critical to meet the evolving display industry's requirements. This study explored the development of high-mobility hexagonal homologous compound (HC) indium zinc tin oxide (IZTO) TFTs as an alternative to α-IGZO TFTs.
View Article and Find Full Text PDFFlow Meas Instrum
March 2025
Fluid Metrology Group, Sensor Science Division, National Institute of Standards and Technology, Gaithersburg, MD 20899.
Numerous process gases are used in the production of semiconductor chips. Accurate metering of these gases into process chambers is critical for maximizing device throughput and yield. A national flow standard for semiconductor process gases does not exist, forcing the industry to rely on approximate "meter factors" to extrapolate a meter calibration carried out with nitrogen to the actual process gas.
View Article and Find Full Text PDFWater Res
February 2025
Department of Civil, Environmental and Architectural Engineering, Korea University, 145 Anam-ro, Seongbuk-gu, Seoul 02841, Republic of Korea. Electronic address:
The semiconductor industry produces large quantities of acidic wastewaters containing high levels of hydrofluoric acid (HF) and sulfuric acid (HSO), which poses severe environmental concern. Zero liquid discharge (ZLD) treatment of these wastewaters is a pressing need for sustainable growth of the semiconductor industry. Herein, we propose an innovative membrane-based hybrid system that combines forward osmosis (FO) with multi-stage NF process for simultaneous treatments of HSO and HF wastewaters.
View Article and Find Full Text PDFSci Technol Adv Mater
February 2025
Department of Bioengineering, The University of Tokyo, Bunkyo-ku, Tokyo, Japan.
Positron emission tomography (PET)/fluorescence dual-modal imaging combines deep penetration and high resolution, making it a promising approach for tumor diagnostics. Semiconductor nanocrystals, known as quantum dots (QDs), have garnered significant attention for fluorescence imaging owing to their tunable emission wavelength, high quantum yield, and excellent photostability. Among these QDs, heavy metal-free InP-based QDs have emerged as a promising candidate, addressing concerns regarding heavy metal-related toxicity.
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