Typical wet-chemical methods for the preparation of silica nanowires use polyvinylpyrrolidone and n-pentanol. This study presents a polyethylene glycol-based emulsion template method for the synthesis of SiO nanowires (SiONWs) in isopropanol. By systematically optimizing key parameters (type of solvent, polyethylene glycol molecular weight and dosage, dosage of sodium citrate, ammonium and tetraethyl orthosilicate, incubation temperature and time), SiONWs with diameters about 530 nm were obtained. Replacing polyvinylpyrrolidone with polyethylene glycol enabled anisotropic growth in isopropanol, overcoming the dependency on traditional solvents like n-pentanol. Scale-up experiments (10× volume) demonstrated robust reproducibility, yielding nanowires with consistent morphology (~580 nm diameter). After calcination at 500 °C for 1 h, the morphology of the nanowires did not change significantly.
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http://dx.doi.org/10.3390/nano15050326 | DOI Listing |
Nanomaterials (Basel)
February 2025
Zhejiang Fuli Analytical Instrument Co., Ltd., Wenling 317500, China.
Typical wet-chemical methods for the preparation of silica nanowires use polyvinylpyrrolidone and n-pentanol. This study presents a polyethylene glycol-based emulsion template method for the synthesis of SiO nanowires (SiONWs) in isopropanol. By systematically optimizing key parameters (type of solvent, polyethylene glycol molecular weight and dosage, dosage of sodium citrate, ammonium and tetraethyl orthosilicate, incubation temperature and time), SiONWs with diameters about 530 nm were obtained.
View Article and Find Full Text PDFACS Nano
March 2025
School of Electronic Science and Engineering, Nanjing University, 210023 Nanjing, China.
Memristors have garnered increasing attention in neuromorphic computing hardware due to their resistive switching characteristics. However, achieving uniformity across devices and further miniaturization for large-scale arrays remain critical challenges. In this study, we demonstrate the scalable production of highly uniform, quasi-one-dimensional diffusive memristors based on heavily doped n-type silicon nanowires (SiNWs) with diameters as small as ∼50 nm, fabricated via in-plane solid-liquid-solid (IPSLS) growth technology.
View Article and Find Full Text PDFNanotechnology
February 2025
Centre de Nanoscience et Nanotechnologie (C2N), Université Paris-Saclay, CNRS, 91120 Palaiseau, France.
Growth of GaN nanowires (NWs) on graphene substrates is carried out by plasma-assisted molecular beam epitaxy. We test a two-step growth procedure consisting of a first stage at relatively low temperature followed by a second stage at higher temperature. We investigate the impact of this process on the usually long incubation time which precedes the first GaN nucleation events on graphene.
View Article and Find Full Text PDFACS Omega
January 2025
Department of Biomedical Engineering, College of Engineering and Information Technology, Emirates International University, Sana'a 16881, Yemen.
Flexible, highly conductive, and transparent silver nanowires (AgNWs) have emerged as vital materials for advanced applications in photovoltaics, touch screens, and optoelectronics. However, their practical deployment has been hindered by issues such as poor adhesion to diverse substrates (e.g.
View Article and Find Full Text PDFPLoS One
January 2025
College of Physics and Electronic Engineering, Hainan Normal University, HaiKou, China.
We have successfully prepared a significant number of nanowires from non-toxic silicon sources. Compared to the SiO silicon source used in most other articles, our preparation method is much safer. It provides a simple and harmless new preparation method for the preparation of silicon nanowires.
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