Correction for 'Simulation of the resistance switching performance and synaptic behavior of TiO-based RRAM devices with CoFeO insertion layers' by Fei Yang , , 2024, , 6729-6738, https://doi.org/10.1039/D3NR05935A.
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Salvinia-Effect-Inspired Magneto-Responsive Superhydrophobic Surfaces with Cluster-Distributed Microcilia Array.
Langmuir
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School of Civil and Hydraulic Engineering, Chongqing University of Science and Technology, Chongqing 401331, China.
Inspired by the "Salvinia effect", a novel method for fabricating a magneto-responsive superhydrophobic surface coated with a cluster-distributed cilia array (CC-MRSS) was reported. This surface features a magnetically self-assembled nonuniform microcilia array and demonstrates exceptional microdroplet hydrophobicity, magnetic-responsive wettability, and corrosion resistance. The fabrication process involved mixing polydimethylsiloxane (PDMS) and carbonyl iron powders (CIPs), followed by dividing the mixture into two parts.
View Article and Find Full Text PDFContinuous exposure of non-obese adult male rats to a soft-textured, readily absorbable diet induces insulin resistance and derangements in hepatic glucose and lipid metabolism.
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Frontier Science Research Center, University of Miyazaki, Miyazaki 889-1692, Japan. Electronic address:
Background: Type 2 diabetes (T2D) is characterized by insulin resistance and defective insulin secretion. Previously, we found that rats fed soft pellets (SPs) on a 3-hour restricted schedule over 14 weeks demonstrated glucose intolerance and insulin resistance with disruption of insulin signaling.
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Resistive switching (RS) memory devices with incorporated capabilities of data sensing, storing and processing are promising for artificial intelligence applications. In this respect, controlling resistance not only by electrical but also optical stimulations provides attractive opportunities for the development of novel neuromorphic sensing and computing systems. Here, we demonstrate the RS of Cu/parylene-PbTe/ITO memristive devices and the dependence of RS on optical excitation for efficient neuromorphic computing with high classification accuracy.
View Article and Find Full Text PDFCorrection: Simulation of the resistance switching performance and synaptic behavior of TiO-based RRAM devices with CoFeO insertion layers.
Nanoscale
March 2025
School of Integrated Circuits, Anhui University, Hefei 230601, China.
Correction for 'Simulation of the resistance switching performance and synaptic behavior of TiO-based RRAM devices with CoFeO insertion layers' by Fei Yang , , 2024, , 6729-6738, https://doi.org/10.1039/D3NR05935A.
View Article and Find Full Text PDFFlexible BaTiO Ferroelectric Nonvolatile Memory for Neuromorphic Computation.
ACS Appl Mater Interfaces
March 2025
College of Optoelectronic Engineering, Guilin University of Electronic Technology, Guilin 541004, China.
The use of BaTiO (BTO) ferroelectric thin films in flexible ferroelectric memory offers a promising pathway for next-generation nonvolatile memory applications, given BTO's excellent ferroelectric properties, stability, high dielectric constant, and strong fatigue resistance. However, the fabrication of BTO on flexible substrates presents a significant technical challenge. In this study, we achieved high-quality, single-crystalline (111)-oriented BTO films on mica substrates through the design of buffer layers.
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