Relaxation of Photoexcited Electron-Hole Pairs at Si(111) Surfaces with Adsorbed Ag Monolayered Clusters of Increasing Size.

The efficiency of silicon solar cells is affected by the light absorption and recombination losses of photoexcited charge carries. One possible way to improve the efficiency is through the deposition of transition metal nanoparticles on Si surfaces. Here, we first carry out density functional theory (DFT) calculations to obtain electronic structures for Ag ( = 1-7) monolayered clusters adsorbed on Si(111)/H surfaces. Results are presented in the form of the density of states, band gaps, and light absorption, which allow for the investigation of the interaction of Ag clusters with Si. Different behaviors can be expected depending on the size of the deposited Ag clusters. Overall, the deposition of Ag clusters leads to smaller band gaps, red-shifts, and large increases in light absorption compared to the pristine Si slab. We then study the relaxation dynamics of electron-hole pairs for slabs based on nonadiabatic couplings using the reduced density matrix approach within the Redfield formalism. Nonradiative relaxation rates are noticeably different for various structures and transitions. One observes higher relaxation rates for surfaces with adsorbates than for the pristine Si surface due to charge transfer events involving Ag orbitals. We also compute emission spectra from excited-state relaxation dynamics. The band gap emission is dark for the pristine Si due to the indirect nature of its band gap. The addition of larger Ag clusters breaks the symmetry of Si slabs, enabling indirect gap transitions. These slabs thus exhibit bright band gap emission. The introduction of adsorbates is advantageous for applications in photovoltaics and photocatalysis.