Halide perovskite ferroelectrics endowed with a distinctive spontaneous polarization effect have been regarded as prospective electroactive materials and are prevalently utilized in solar cells, photoelectric detection, and other domains. Among them, multipolar-axis ferroelectrics featuring multiple equivalent polarization directions are particularly desirable for diverse areas of applications. Nevertheless, the design and regulation of multipolar axis perovskite ferroelectrics remains a significant challenge. Here, guided by the strategy of layer regulation, we successfully designed and regulated a series of 2D homologous perovskites OA2Csn-1PbnBr3n+1 (OA = n-octylammonium, n = 1-3). Notably, OA2Csn-1PbnBr3n+1 exhibits layer-dependent ferroelectricity: OA2PbBr4 exhibits non-ferroelectricity, OA2CsPb2Br7 displays uniaxial ferroelectricity, while OA2Cs2Pb3Br10 with multiaxial ferroelectricity. Moreover, the devices fabricated based on OA2Cs2Pb3Br10 achieve high-performance self-driven photodetection in multiple directions. This precise layer-regulation strategy offers an efficient approach to obtaining and regulating multipolar-axis perovskite ferroelectrics, presenting the potential for next-generation optoelectronic devices.
Download full-text PDF |
Source |
---|---|
http://dx.doi.org/10.1002/anie.202425653 | DOI Listing |
Angew Chem Int Ed Engl
March 2025
Chinese Academy of Sciences Fujian Institute of Research on the Structure of Matter, Fujian institute of research on structure of mater, yangqiao west road 155, 350002, fuzhou, CHINA.
Halide perovskite ferroelectrics endowed with a distinctive spontaneous polarization effect have been regarded as prospective electroactive materials and are prevalently utilized in solar cells, photoelectric detection, and other domains. Among them, multipolar-axis ferroelectrics featuring multiple equivalent polarization directions are particularly desirable for diverse areas of applications. Nevertheless, the design and regulation of multipolar axis perovskite ferroelectrics remains a significant challenge.
View Article and Find Full Text PDFJ Phys Condens Matter
March 2025
Department of Physics, Indian Institute of Technology (BHU) Varanasi Department of Physics, Dept of Physics, IIT (BHU), Varanasi-221005, India, Varanasi, UP, 221005, INDIA.
Lead-free perovskite halide CsSnI_{3} has emerged as a promising material for optoelectronic applications due to its direct bandgap (1.3-1.4 eV), high charge carrier mobility, and strong visible-spectrum absorption.
View Article and Find Full Text PDFACS Nano
March 2025
School of Chemical Engineering, Pusan National University, Busandaehak-ro 63 beon-gil 2, Geumjeong-gu, Busan 46241, Republic of Korea.
Integration of resistive switching and rectification functions in a single memory device is promising for high writing/readout accuracy with a simplified device architecture, but the realization remains challenging, especially with a low voltage operation. Herein, we developed self-rectifying resistive memory with a single memristive layer that can be operated at ultralow voltages with an excellent rectification ratio. The memristive layer consisted of a phase-separated lateral heterostructure of a ferroelectric polymer, poly(vinylidene fluoride--trifluoroethylene) [P(VDF-TrFE)], and a 2D halide perovskite, butylammonium lead iodide (BAPbI), which could be readily fabricated by spin-casting.
View Article and Find Full Text PDFChem Commun (Camb)
March 2025
Department of Physics and Astronomy & Nebraska Center for Materials and Nanoscience, University of Nebraska-Lincoln, Lincoln, NE, 68588-0299, USA.
Capitalizing on the nonvolatile, nanoscale controllable polarization, ferroelectric perovskite oxides can be integrated with various functional materials for designing emergent phenomena enabled by charge, lattice, and polar symmetry mediated interfacial coupling, as well as for constructing novel energy-efficient electronics and nanophotonics with programmable functionalities. When prepared in thin film or membrane forms, the ferroelectric instability of these materials is highly susceptible to the interfacial electrostatic and mechanical boundary conditions, resulting in tunable polarization fields and Curie temperatures and domain formation. This review focuses on two types of ferroelectric oxide-based heterostructures: the epitaxial perovskite oxide heterostructures and the ferroelectric oxides interfaced with two-dimensional van der Waals materials.
View Article and Find Full Text PDFNanoscale
March 2025
Chemistry of Thin Film Materials, Department of Chemistry and Pharmacy, Friedrich-Alexander-Universität Erlangen-Nürnberg, Cauerstr. 3, 91058 Erlangen, Germany.
Perovskite oxides like barium titanate (BaTiO) exhibit desirable properties: notably high dielectric constants, piezoelectricity, and ferroelectricity, thereby enabling more advanced electronic devices and actuators. There are numerous synthesis procedures for BaTiO, among which, nanoparticle syntheses are versatile and well-studied. However, colloidal organometallic synthesis is less commonly employed for this material despite offering processing advantages like facile compositional control and customizable surface chemistry.
View Article and Find Full Text PDFEnter search terms and have AI summaries delivered each week - change queries or unsubscribe any time!