Real-time and precise evaluation of human body temperature offers crucial insights for health monitoring and disease diagnosis, while integration of high-performance and miniaturized sensors remains a challenge. Inspired by the thermal sensory pathway of skin, here we developed a new route for scalable fabrication of rapid-response and miniaturized thermoreceptor sensors using self-aligned in-plane silicon nanowire (SiNW) arrays as sensitive channels. These SiNW arrays, with a diameter of 100 ± 14 nm, were integrated into temperature sensors with a density of 445 devices/cm without using any high-precision lithography. The sensors exhibited an excellent temperature coefficient of resistance of -1.8%/°C, enabling the precise spatial identification of heat sources. They achieved real-time monitoring of temperature changes during breathing and blowing activities, with a rapid response time of ∼0.2 s and recovery time of ∼1 s. This study provides a robust foundation for the integration of advanced miniaturized temperature sensors for biological monitoring applications.
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http://dx.doi.org/10.1021/acs.nanolett.4c05235 | DOI Listing |
Nanomaterials (Basel)
February 2025
Zhejiang Fuli Analytical Instrument Co., Ltd., Wenling 317500, China.
Typical wet-chemical methods for the preparation of silica nanowires use polyvinylpyrrolidone and n-pentanol. This study presents a polyethylene glycol-based emulsion template method for the synthesis of SiO nanowires (SiONWs) in isopropanol. By systematically optimizing key parameters (type of solvent, polyethylene glycol molecular weight and dosage, dosage of sodium citrate, ammonium and tetraethyl orthosilicate, incubation temperature and time), SiONWs with diameters about 530 nm were obtained.
View Article and Find Full Text PDFACS Nano
March 2025
School of Electronic Science and Engineering, Nanjing University, 210023 Nanjing, China.
Memristors have garnered increasing attention in neuromorphic computing hardware due to their resistive switching characteristics. However, achieving uniformity across devices and further miniaturization for large-scale arrays remain critical challenges. In this study, we demonstrate the scalable production of highly uniform, quasi-one-dimensional diffusive memristors based on heavily doped n-type silicon nanowires (SiNWs) with diameters as small as ∼50 nm, fabricated via in-plane solid-liquid-solid (IPSLS) growth technology.
View Article and Find Full Text PDFNanoscale
March 2025
Bio/CMOS Interfaces Lab, Institute of Electrical and Micro Engineering, Engineering Faculty, École Polytechnique Fédérale de Lausanne, Rue de la Maladiere 71b, Neuchatel, 2000, Switzerland.
Memristors are garnering significant attention due to their high similarity to biological neurons and synapses, alongside their unique physical mechanisms. Biosensors exhibiting memristive behaviour have demonstrated substantial efficacy in detecting therapeutic and biological compounds in the past decade. This report investigates silicon nanowire (SiNW)-based devices incorporating Schottky barriers, which exhibit potential for memristive behaviour.
View Article and Find Full Text PDFNano Lett
March 2025
School of Electronic Science and Engineering/National Laboratory of Solid-State Microstructures, Nanjing University, Nanjing, 210023, P. R. China.
Real-time and precise evaluation of human body temperature offers crucial insights for health monitoring and disease diagnosis, while integration of high-performance and miniaturized sensors remains a challenge. Inspired by the thermal sensory pathway of skin, here we developed a new route for scalable fabrication of rapid-response and miniaturized thermoreceptor sensors using self-aligned in-plane silicon nanowire (SiNW) arrays as sensitive channels. These SiNW arrays, with a diameter of 100 ± 14 nm, were integrated into temperature sensors with a density of 445 devices/cm without using any high-precision lithography.
View Article and Find Full Text PDFNanoscale
March 2025
School of Microelectronics, Hefei University of Technology, Hefei 230009, China.
Silicon-based broadband photodetectors (BBPDs) are extensively utilized in both the civilian and military fields due to their advanced fabrication processes and superior optoelectronic properties. However, most silicon-based BBPDs exhibit significantly reduced response in the visible range compared to the near-infrared band, which limits their further application in advanced optoelectronic systems. In this study, a visible-light-enhanced TiCT MXene/Si NW heterojunction BBPD is constructed by employing a small diameter silicon nanowire (Si NW) array.
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