Interface phenomena and emerging functionalities in ferroelectric oxide based heterostructures.

Chem Commun (Camb)

Department of Physics and Astronomy & Nebraska Center for Materials and Nanoscience, University of Nebraska-Lincoln, Lincoln, NE, 68588-0299, USA.

Published: March 2025

Capitalizing on the nonvolatile, nanoscale controllable polarization, ferroelectric perovskite oxides can be integrated with various functional materials for designing emergent phenomena enabled by charge, lattice, and polar symmetry mediated interfacial coupling, as well as for constructing novel energy-efficient electronics and nanophotonics with programmable functionalities. When prepared in thin film or membrane forms, the ferroelectric instability of these materials is highly susceptible to the interfacial electrostatic and mechanical boundary conditions, resulting in tunable polarization fields and Curie temperatures and domain formation. This review focuses on two types of ferroelectric oxide-based heterostructures: the epitaxial perovskite oxide heterostructures and the ferroelectric oxides interfaced with two-dimensional van der Waals materials. The topics covered include the basic synthesis methods for ferroelectric oxide thin films, membranes, and heterostructures, characterization of their properties, and various emergent phenomena hosted by the heterostructures, including the polarization-controlled metal-insulator transition and magnetic anisotropy, negative capacitance effect, domain-imposed one-dimensional graphene superlattices, programmable second harmonic generation, and interface-enhanced polar alignment and piezoelectric response, as well as their applications in nonvolatile memory, logic, and reconfigurable optical devices. Possible future research directions are also outlined, encompassing the synthesis remote epitaxy and oxide moiré engineering, incorporation of binary ferroelectric oxides, realization of topological properties, and functional design of oxygen octahedral rotation.

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http://dx.doi.org/10.1039/d4cc05836dDOI Listing

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