Capitalizing on the nonvolatile, nanoscale controllable polarization, ferroelectric perovskite oxides can be integrated with various functional materials for designing emergent phenomena enabled by charge, lattice, and polar symmetry mediated interfacial coupling, as well as for constructing novel energy-efficient electronics and nanophotonics with programmable functionalities. When prepared in thin film or membrane forms, the ferroelectric instability of these materials is highly susceptible to the interfacial electrostatic and mechanical boundary conditions, resulting in tunable polarization fields and Curie temperatures and domain formation. This review focuses on two types of ferroelectric oxide-based heterostructures: the epitaxial perovskite oxide heterostructures and the ferroelectric oxides interfaced with two-dimensional van der Waals materials. The topics covered include the basic synthesis methods for ferroelectric oxide thin films, membranes, and heterostructures, characterization of their properties, and various emergent phenomena hosted by the heterostructures, including the polarization-controlled metal-insulator transition and magnetic anisotropy, negative capacitance effect, domain-imposed one-dimensional graphene superlattices, programmable second harmonic generation, and interface-enhanced polar alignment and piezoelectric response, as well as their applications in nonvolatile memory, logic, and reconfigurable optical devices. Possible future research directions are also outlined, encompassing the synthesis remote epitaxy and oxide moiré engineering, incorporation of binary ferroelectric oxides, realization of topological properties, and functional design of oxygen octahedral rotation.
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http://dx.doi.org/10.1039/d4cc05836d | DOI Listing |
Nanomaterials (Basel)
March 2025
Department of Chemical and Biochemical Engineering, Dongguk University, 30 Pildong-ro 1-gil, Jung-gu, Seoul 04620, Republic of Korea.
Flexible polymer-based piezoelectric nanogenerators (PENGs) have gained significant interest due to their ability to deliver clean and sustainable energy for self-powered electronics and wearable devices. Recently, the incorporation of fillers into the ferroelectric polymer matrix has been used to improve the relatively low piezoelectric properties of polymer-based PENGs. In this study, we investigated the effect of various nanofillers such as titania (TiO), zinc oxide (ZnO), reduced graphene oxide (rGO), and lead zirconate titanate (PZT) on the PENG performance of the nanocomposite thin films containing the nanofillers in poly(vinylidene fluoride-co-trifluoro ethylene) (P(VDF-TrFE)) matrix.
View Article and Find Full Text PDFACS Nano
March 2025
School of Chemical Engineering, Pusan National University, Busandaehak-ro 63 beon-gil 2, Geumjeong-gu, Busan 46241, Republic of Korea.
Integration of resistive switching and rectification functions in a single memory device is promising for high writing/readout accuracy with a simplified device architecture, but the realization remains challenging, especially with a low voltage operation. Herein, we developed self-rectifying resistive memory with a single memristive layer that can be operated at ultralow voltages with an excellent rectification ratio. The memristive layer consisted of a phase-separated lateral heterostructure of a ferroelectric polymer, poly(vinylidene fluoride--trifluoroethylene) [P(VDF-TrFE)], and a 2D halide perovskite, butylammonium lead iodide (BAPbI), which could be readily fabricated by spin-casting.
View Article and Find Full Text PDFChem Commun (Camb)
March 2025
Department of Physics and Astronomy & Nebraska Center for Materials and Nanoscience, University of Nebraska-Lincoln, Lincoln, NE, 68588-0299, USA.
Capitalizing on the nonvolatile, nanoscale controllable polarization, ferroelectric perovskite oxides can be integrated with various functional materials for designing emergent phenomena enabled by charge, lattice, and polar symmetry mediated interfacial coupling, as well as for constructing novel energy-efficient electronics and nanophotonics with programmable functionalities. When prepared in thin film or membrane forms, the ferroelectric instability of these materials is highly susceptible to the interfacial electrostatic and mechanical boundary conditions, resulting in tunable polarization fields and Curie temperatures and domain formation. This review focuses on two types of ferroelectric oxide-based heterostructures: the epitaxial perovskite oxide heterostructures and the ferroelectric oxides interfaced with two-dimensional van der Waals materials.
View Article and Find Full Text PDFNanoscale
March 2025
Chemistry of Thin Film Materials, Department of Chemistry and Pharmacy, Friedrich-Alexander-Universität Erlangen-Nürnberg, Cauerstr. 3, 91058 Erlangen, Germany.
Perovskite oxides like barium titanate (BaTiO) exhibit desirable properties: notably high dielectric constants, piezoelectricity, and ferroelectricity, thereby enabling more advanced electronic devices and actuators. There are numerous synthesis procedures for BaTiO, among which, nanoparticle syntheses are versatile and well-studied. However, colloidal organometallic synthesis is less commonly employed for this material despite offering processing advantages like facile compositional control and customizable surface chemistry.
View Article and Find Full Text PDFNat Commun
March 2025
Physical Science and Engineering Division, King Abdullah University of Science and Technology, Thuwal, Saudi Arabia.
Polar skyrmions are topologically nontrivial polarization textures that demonstrate exotic physical phenomena and novel memory applications. Thus far, these textures have primarily been reported in oxide-ferroelectric-based epitaxial heterostructures because their stabilization requires an elastic energy penalty from the epitaxial strains. Here, without the epitaxial-strain engineering, we discover polar skyrmion bubbles in stand-alone van der Waals ferroelectric CuInPS crystal through the combination of piezoelectric force microscopy, high-resolution transmission electron microscopy, and phase-field simulations.
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