Controllable growth of wafer-lever MoS films by using heating sulfurization treatment.

Few-layer MoS films have garnered significant attention as promising materials for electronic devices and sensors due to their exceptional carrier mobility and tunable bandgap. Although various chemical vapor deposition (CVD) techniques have been employed to fabricate few-layer MoS films, there remains a need for film homogeneity, continuity, and crystalline quality improvements. This research used the TVS method to fabricate large-scale few-layered MoS films. The metal Mo films were sulfurized under high vacuum conditions using both and rapid heating techniques. The treatment method resulted in a mixed phase of MoO-MoS, whereas the approach produced uniform and pure polycrystalline 2H-MoS films. By adjusting the thickness of the Mo film, a tri-layer 2H-MoS film grown on a 2-inch sapphire wafer served as the channel material for a top-gate thin-film transistor (TFT). Electrical measurements indicated an n-type semiconductor behavior with a field-effect mobility of 9.2 cm V s and an / ratio of approximately 10. These results confirm that the rapid treatment technique effectively grows high-quality, wafer-scale, and layer-controlled few-layer MoS films.