Tuning quantum emission to a specific wavelength at room temperature holds significant promise for enhancing secure quantum communication, particularly by aligning with the Fraunhofer lines in the solar spectrum. The integration of quantum emitters with phase-change materials enables emission wavelength modulation, especially when strong field enhancement is present. Antimony telluride (SbTe) exhibits the potential to facilitate this functionality through its support of interband plasmonics and phase-change behavior. In this study, Sb₂Te₃ antennae are designed and fabricated to tune the emission energy of adjacent perovskite quantum dots (QDs) by over 570 meV. The underlying mechanism involves the localized surface plasmons (LSPs) on Sb₂Te₃ nanostructures, which exhibit a surface-enhanced Landau damping process that facilitates the decay of LSPs into electron-hole pairs. The generated hot electrons are then injected into perovskite QDs via the microscopic electron transport process, which can be triggered by the transition of SbTe from amorphous to a crystalline state, resulting in a significant emission energy shift from 1.64 to 2.21 eV. Furthermore, the emission energy of perovskite QDs on crystalline Sb₂Te₃ nanoantennae can be modulated through DC voltage bias, highlighting the potential for extensive wavelength tunability of quantum emitters integrated with electronic systems.
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http://dx.doi.org/10.1002/adma.202419076 | DOI Listing |
Nanomaterials (Basel)
February 2025
Graduate School of Engineering Science, Yokohama National University, Yokohama 240-8501, Japan.
We propose a simple and innovative configuration consisting of a quantum dot and micro-optical resonator that emits single photons with good directionality in a plane parallel to the substrate. In this device, a single quantum dot is placed as a light source between the slits of a triangular split-ring micro-optical resonator (SRR) supported in an optical polymer film with an air-bridge structure. Although most of the previous single photon emitters in solid-state devices emitted photons upward from the substrate, operation simulations confirmed that this configuration realizes lateral light emission in narrow regions above, below, left, and right in the optical polymer film, despite the absence of a light confinement structure such as an optical waveguide.
View Article and Find Full Text PDFAngew Chem Int Ed Engl
March 2025
City University of Hong Kong, Department of Chemistry, Department of Materials Science and Engineering, and Center of Super-Diamond and Advanced Films (COSDAF), HONG KONG.
Through-space charge transfer (TSCT) rather than the commonly postulated metal-to-ligand charge transfer (MLCT) process was proposed in getting the lowest lying excited state of newly designed Ir(III) blue phosphors. Accordingly, two benzo[d]imidazolylidene pro-chelates L12H2+ and L13H2+, one with two cyano groups at the peri-benzo and N-aryl pendent and the other with its peri-cyano group being replaced with methyl substituent, were employed in syntheses of Ir(III) complexes f-ct12b,c and f-ct13b,c. Notably, complexes f-ct12b,c exhibited the traditional MLCT process, while f-ct13b,c were dominated by the TSCT transition, resulting in a smaller S1-T1 energy gap ΔEST.
View Article and Find Full Text PDFNano Lett
March 2025
Institute for Research in Electronics and Applied Physics, University of Maryland, College Park, Maryland 20742, United States.
Silicon G centers show significant promise as single photon sources in a scalable silicon platform. But these color centers have large nonradiative decay and a low Debye-Waller factor, limiting their usability in quantum applications. In this work, we demonstrate bright Purcell-enhanced emission from a silicon G center by coupling it to a nanophotonic cavity.
View Article and Find Full Text PDFMater Horiz
March 2025
School of Materials Science and Engineering, Guangdong Provincial Key Laboratory of Fiber Laser Materials and Applied Techniques, Guangdong Engineering Technology Research and Development Center of Special Optical Fiber Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou, 510640, China.
Near infrared mechanoluminescence (NIR-ML) materials have attracted the attention of researchers due to their unique advantages, such as high resistance to bright-field interference and higher penetration depth into biological tissues. However, the reported NIR-ML materials are mainly rare-ion-activated narrow-band emitters. In this work, we report a NIR-ML material of BaGaO:Cr by a solid state reaction method.
View Article and Find Full Text PDFRSC Adv
February 2025
Department of Chemistry Education, Graduate Department of Chemical Materials, Institute for Plastic Information and Energy Materials, Sustainable Utilization of Photovoltaic Energy Research Center (ERC), Pusan National University Busan 46241 Republic of Korea
The development of eco-friendly solution-processed PHOLEDs (s-PHOLEDs) is a significant issue due to the toxicity of halogenated solvents. However, high-performance s-PHOLEDs have predominantly relied on halogenated solvents, owing to their superior ability to dissolve organic materials and facilitate high-quality film formation in the EMLs. To advance the development of eco-friendly s-PHOLEDs, several criteria are required to solve; the development of emitters and host materials having high solubility in eco-friendly solvents and the establishment of optimal conditions for achieving high-quality films, including uniformity, thickness, and morphology.
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