Nanoimprint lithography (NIL) is gradually becoming a powerful tool for the fabrication of periodic nanostructures. This method can offer a more cost-effective solution for large-scale manufacturing compared to methods that only rely on deep ultraviolet (DUV) immersion, since the product of DUV immersion can be utilized as a Si mold to fabricate a reusable plastic stamp mold. In this work, arrays of plastic nanopillars coated with nanostructured gold film exhibiting ultra density prepared through NIL and Au sputtering are successfully developed. The obtained plastic nanopillar substrate is templated from Si nanopillar substrate with a pitch of 90 nm. As a result, the plastic nanopillar features a similar pitch size. Besides, benzenedithiol (BDT) was used as the standard analyte to evaluate the uniformity of the substrates as well as the SERS enhancement effect. Eventually, it is demonstrated that the substrate constituted of Au-capped plastic nanopillar shows a low coefficient of variation (CV) at 5.46 % along with a strong SERS enhancement effect. These performances match with the Si based SERS substrate manufactured via DUV immersion reported in our previous work.
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http://dx.doi.org/10.1016/j.saa.2025.125989 | DOI Listing |
Spectrochim Acta A Mol Biomol Spectrosc
March 2025
School of Microelectronics, Shanghai University, Shanghai 201800, China; Institute of Medical Chips, Ruijin Hospital, Shanghai Jiao Tong University School of Medicine, Shanghai 200025, China; Shanghai Photonic View Technology Co., Ltd, Shanghai 200444, China. Electronic address:
Nanoimprint lithography (NIL) is gradually becoming a powerful tool for the fabrication of periodic nanostructures. This method can offer a more cost-effective solution for large-scale manufacturing compared to methods that only rely on deep ultraviolet (DUV) immersion, since the product of DUV immersion can be utilized as a Si mold to fabricate a reusable plastic stamp mold. In this work, arrays of plastic nanopillars coated with nanostructured gold film exhibiting ultra density prepared through NIL and Au sputtering are successfully developed.
View Article and Find Full Text PDFPerfectly vertical grating couplers have various applications in optical I/O such as connector design, coupling to multicore optical fibers and multilayer silicon photonics. However, it is challenging to achieve perfectly vertical coupling without simultaneously increasing reflection. In this paper, we use the adjoint method as well as an adjoint-inspired methodology to design devices that can be fabricated using only a single-etch step in a c-Si 193 nm DUV immersion lithography process, while maintaining good coupling and low reflection.
View Article and Find Full Text PDFThe implementation of polarization controlling components enables additional functionalities of short-wave infrared (SWIR) imagers. The high-performance and mass-producible polarization controller based on Si metasurface is in high demand for the next-generation SWIR imaging system. In this work, we report the first demonstration of all-Si metasurface based polarizing bandpass filters (PBFs) on 12-inch wafers.
View Article and Find Full Text PDFAppl Opt
June 2012
Seiko Epson Corporation, 3-3-5 Owa, Suwa, Nagano 392-8502, Japan.
Interference lithography using a deep-ultraviolet (DUV) laser is instrumental in the manufacture of subwavelength patterns used at visible wavelengths. We investigated a grating mask strategy for exposure in terms of how to set and illuminate masks. To obtain high aspect ratio patterns, high fringe visibility, and high exposure uniformity are essential, and for that purpose the use of only two beams with liquid immersion is necessary but not sufficient.
View Article and Find Full Text PDFWe report on the first demonstration of flat substrate imaging gratings fabricated by deep ultraviolet (DUV) photoreduction lithography, which uniquely offers sub-100-nm resolution and spatial coherence over centimeter scales. Reflective focusing gratings, designed according to holographic principle, were fabricated on 300-mm silicon wafers by immersion DUV lithography. Spatial coherence of the fabrication process is evident in measured diffraction-limited imaging function.
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