Multistep In Situ Porosification of N-Polar InGaN with Reduced Hillock Density to Achieve Strain-Relaxed InGaN Pseudosubstrates while Maintaining Miscut Steps.

An up to 40% relaxed N-polar InGaN pseudosubstrate was obtained by a multistep in situ porosification technique on the N-polar GaN template using the metal-organic chemical vapor deposition (MOCVD) method. An InGaN/InGaN/GaN superlattice (SL) layer (SL) with a higher composition of InGaN ( = 15.2%) compared to InGaN ( = 8.4%) was in situ porosified and coalesced with a thin GaN layer. Following the coalescence layer, an 80 nm-thick InGaN/InGaN/GaN SL (SL) layer with = 13% and = 9% was deposited as a second in situ porous layer and coalesced similarly with the GaN layer. Finally, a 160 nm-thick InGaN/InGaN/GaN SL (SL) layer was deposited on top of the SL and GaN coalescence layer to obtain a strain-relaxed pseudosubstrate. Up to 40% bulk relaxation of the SL buffer layer was determined after a multistep porosification process. A smooth surface morphology (roughness <2 nm) along with a 50% reduction in hillock density was observed in the partially relaxed InGaN pseudosubstrate (SL). Furthermore, photoluminescence (PL) measurements showed around 80% relaxation for the near-surface SL layer. The multistep in situ porosification technique demonstrated a robust approach to produce a strain-relaxed InGaN pseudosubstrate suitable for lattice engineering.