Three-dimensional (3D) III-V semiconductors including indium pnictides are widely used in optoelectronic devices, such as light-emitting diodes, laser diodes and photodetectors, in their bulk or thin-film geometries. On the other hand, two-dimensional (2D) atomic crystals such as graphene, phosphorene, and transition metal dichalcogenides are promising candidates for next generation optoelectronic technologies. Here, we designed a type of III-V indium pnictide 2D material that can be exfoliated and rebuilt from bulk wurtzite structures, which show benign stability and intriguing physical properties, including in-plane ferroelectricity/antiferroelectricity with low transition barriers (0.01-0.31 eV f.u.), direct/quasi-direct band gaps (HSE + SOC: 1.498-2.852 eV), ferroelasticity (2.86-11.90% elastic deformation), switchable hidden spin polarization and spin splitting (31 meV), as well as controllable in-plane negative Poisson's ratio (∼-0.51). Our study suggests a new class of optoelectronic materials that combines the advantages of the well-studied 3D III-V semiconductors and 2D atomic crystals and offers a platform to study the interplay of optoelectronic properties with multiferroic, spintronic, and mechanical properties for the development of miniaturized multifunctional optoelectronic devices.
Download full-text PDF |
Source |
|---|---|
| http://dx.doi.org/10.1039/d4cp04629c | DOI Listing |
Publication Analysis
Top Keywords
Similar Publications
Colloidal Chemistry in Molten Inorganic Salts: Direct Synthesis of III-V Quantum Dots via Dehalosilylation of (MeSi)Pn (Pn = P, As) with Group III Halides.
J Am Chem Soc
March 2025
Department of Chemistry, James Franck Institute, and Pritzker School of Molecular Engineering, University of Chicago, Chicago, Illinois 60637, United States.
Gallium pnictides, such as GaAs and GaP, are among the most widely used semiconductors for electronic, optoelectronic, and photonic applications. However, solution syntheses of gallium pnictide nanomaterials are less developed than those of many other colloidal semiconductors, including indium pnictides, II-VI and IV-VI compounds, and lead halide perovskites. In this work, we demonstrate that the Wells dehalosilylation reaction can be carried out in molten inorganic salt solvents to synthesize colloidal GaAs, GaP, and GaPAs nanocrystals.
View Article and Find Full Text PDFMultiferroicity in two-dimensional III-V indium pnictide optoelectronic materials.
Phys Chem Chem Phys
March 2025
Academy for Advanced Interdisciplinary Studies, Southern University of Science and Technology, Shenzhen, 518055, China.
Three-dimensional (3D) III-V semiconductors including indium pnictides are widely used in optoelectronic devices, such as light-emitting diodes, laser diodes and photodetectors, in their bulk or thin-film geometries. On the other hand, two-dimensional (2D) atomic crystals such as graphene, phosphorene, and transition metal dichalcogenides are promising candidates for next generation optoelectronic technologies. Here, we designed a type of III-V indium pnictide 2D material that can be exfoliated and rebuilt from bulk wurtzite structures, which show benign stability and intriguing physical properties, including in-plane ferroelectricity/antiferroelectricity with low transition barriers (0.
View Article and Find Full Text PDFStructural and Transport Properties of Thin InAs Layers Grown on InAlAs Metamorphic Buffers.
Nanomaterials (Basel)
January 2025
Istituto Nanoscienze-CNR and Scuola Normale Superiore, Piazza San Silvestro 12, 56127 Pisa, Italy.
Indium Arsenide is a III-V semiconductor with low electron effective mass, a small band gap, strong spin-orbit coupling, and a large g-factor. These properties and its surface Fermi level pinned in the conduction band make InAs a good candidate for developing superconducting solid-state quantum devices. Here, we report the epitaxial growth of very thin InAs layers with thicknesses ranging from 12.
View Article and Find Full Text PDFControl Over Metal-Halide Reactivity Enables Uniform Growth of InSb Colloidal Quantum Dots for Enhanced SWIR Light Detection.
Adv Mater
February 2025
Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto, ON, M5S 3G4, Canada.
InSb colloidal quantum dots (CQDs) hold promise in short-wave infrared sensing; however, their synthesis presents ongoing challenges, particularly in achieving precise size control - this is the result of poorly controlled reactivity among the precursors. Herein, the use of alkyl-phosphine and amine-based organic additives to control the reactivity of In and Sb precursors during the nucleation and growth of CQDs is developed. This interplay between organic additive and precursors enables the synthesis of InSb CQDs having narrowed size distributions; and bandgaps tunable across the 1.
View Article and Find Full Text PDFVisible-Telecom Entangled-Photon Pair Generation with Integrated Photonics: Guidelines and a Materials Comparison.
ACS Photonics
January 2025
Electrical and Computer Engineering Department, University of California, Santa Barbara, California 93106, United States.
Correlated photon-pair sources are key components for quantum computing, networking, synchronization, and sensing applications. Integrated photonics has enabled chip-scale sources using nonlinear processes, producing high-rate time-energy and polarization entanglement at telecom wavelengths with sub-100 microwatt pump power. Many quantum systems operate in the visible or near-infrared ranges, necessitating visible-telecom entangled-pair sources for connecting remote systems via entanglement swapping and teleportation.
View Article and Find Full Text PDFWant AI Summaries of new PubMed Abstracts delivered to your In-box?
Enter search terms and have AI summaries delivered each week - change queries or unsubscribe any time!