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While amorphous indium gallium zinc oxide (α-IGZO) thin film transistors (TFTs) are practical alternatives to silicon-based TFTs, their field-effect mobility (∼50 cm/(V s), depending on deposition conditions) remains insufficient to meet the growing demands of high-resolution active-matrix organic light-emitting diode (AMOLED) displays. The need for high-performance oxide TFTs with mobility ≥100 cm/(V s) has become critical to meet the evolving display industry's requirements. This study explored the development of high-mobility hexagonal homologous compound (HC) indium zinc tin oxide (IZTO) TFTs as an alternative to α-IGZO TFTs.

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Effect of Various Nanofillers on Piezoelectric Nanogenerator Performance of P(VDF-TrFE) Nanocomposite Thin Film.

Nanomaterials (Basel)

March 2025

Department of Chemical and Biochemical Engineering, Dongguk University, 30 Pildong-ro 1-gil, Jung-gu, Seoul 04620, Republic of Korea.

Flexible polymer-based piezoelectric nanogenerators (PENGs) have gained significant interest due to their ability to deliver clean and sustainable energy for self-powered electronics and wearable devices. Recently, the incorporation of fillers into the ferroelectric polymer matrix has been used to improve the relatively low piezoelectric properties of polymer-based PENGs. In this study, we investigated the effect of various nanofillers such as titania (TiO), zinc oxide (ZnO), reduced graphene oxide (rGO), and lead zirconate titanate (PZT) on the PENG performance of the nanocomposite thin films containing the nanofillers in poly(vinylidene fluoride-co-trifluoro ethylene) (P(VDF-TrFE)) matrix.

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We demonstrate a thermally controlled ultra-wideband wide incident angle metamaterial absorber with switchable transmission at the THz band in this paper. The underlying hybrid structure of FSS-VO thin films make them switchable between absorption mode and transmission mode by controlling the temperature. It can achieve ultra-wideband absorption with above 90% absorption from 1 THz to 10 THz and exhibits excellent absorption performance under a wide range of incident and polarization angles at a high temperature (80 °C).

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Emission Enhancement of ZnO Thin Films in Ultraviolet Wavelength Region Using Au Nano-Hemisphere on Al Mirror Structures.

Nanomaterials (Basel)

March 2025

Department of Physics and Electronics, Graduate School of Engineering, Osaka Metropolitan University, 1-1 Gakuen-cho, Naka-ku, Sakai 599-8531, Osaka, Japan.

Using a heterogeneous metal Nano Hemisphere on Mirror (NHoM) structure, composed of an AlO thin film and Au nano-hemispheres formed on a thick Al film, we successfully generated two distinct surface plasmon resonance (SPR) peaks: one in the ultraviolet (UV) wavelength range below 400 nm and another in the visible range between 600 and 700 nm. This NHoM structure can be fabricated through a straightforward process involving deposition, sputtering, and annealing, enabling rapid, large-area formation. By adjusting the thickness of the AlO spacer layer in the NHoM structure, we precisely controlled the localized surface plasmon resonance (LSPR) wavelength, spanning a wide range from the UV to the visible spectrum.

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High-Breakdown and Low-Leakage 4H-SiC MOS Capacitor Based on HfO/SiO Stacked Gate Dielectric in Trench Structures.

Nanomaterials (Basel)

February 2025

Institute of Wide Bandgap Semiconductors and Future Lighting, Academy for Engineering & Technology, Fudan University, Shanghai 200433, China.

The progression of SiC MOSFET technology from planar to trench structures requires optimized gate oxide layers within the trench to enhance device performance. In this study, we investigated the interface characteristics of HfO and SiO/HfO gate dielectrics grown by atomic layer deposition (ALD) on SiC trench structures. The trench structure morphology was revealed using scanning electron microscopy (SEM).

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