We report a combined electrical transport and optical study of the superconductivity in atomically thin NbSe_{2}. When subjected to an out-of-plane magnetic field, an anomalous metallic state emerges, characterized by a finite longitudinal resistance and a vanishing Hall resistance, suggesting the presence of particle-hole symmetry. We establish a superconducting Higgs mode in atomically thin samples, which reveals enduring superconducting fluctuations that withstand unexpectedly high reduced magnetic fields. These findings provide evidence of robust locally paired electrons in the anomalous metallic state, affirming its bosonic nature.
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http://dx.doi.org/10.1103/PhysRevLett.134.066002 | DOI Listing |
Materials (Basel)
March 2025
Faculty of Metals Engineering and Industrial Computer Science, AGH University of Krakow, al. Mickiewicza 30, 30-059 Krakow, Poland.
This study investigates the structural and catalytic properties of pure and Sr-doped LaCoO and LaFeO thin films for potential use as resistive gas sensors. Thin films were deposited via pulsed laser deposition (PLD) and characterized using X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM), atomic force microscopy (AFM), nanoindentation, and scratch tests. XRD analysis confirmed the formation of the desired perovskite phases without secondary phases.
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February 2025
Graduate School of Energy Science, Kyoto University, Kyoto 606-8501, Japan.
In this research, Hall effect experiments and optical fittings were mainly conducted to elucidate the effect of hydrogen annealing on the electronic properties of polycrystalline Al-doped Zinc Oxide thin films by distinguishing the scattering by ion impurities and the scattering by grain boundaries. By comparing the carrier density and those mobilities of H-annealed samples with Ar-annealed samples, the effect of H annealing was highlighted. AZO thin films were prepared on the quartz glass substrate at R.
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February 2025
Department of Advanced Materials Engineering, Tech University of Korea, Siheung-si 15073, Republic of Korea.
With the improvement of integration levels to several nanometers or less, semiconductor leakage current has become an important issue, and oxide-based semiconductors, which have replaced Si-based channel layer semiconductors, have attracted attention. Herein, we fabricated capacitors with a metal-insulator-semiconductor-metal structure using HfO thin films deposited at 240 °C and TiO thin films deposited at 300 °C via remote plasma (RP) and direct plasma (DP) atomic layer deposition and analyzed the effects of the charge-trapping and semiconducting properties of these films. Charge-trapping memory (CTM) devices with HfO (charge-trapping layer) and TiO (semiconductor) films were fabricated and characterized in terms of their memory properties.
View Article and Find Full Text PDFNanomaterials (Basel)
February 2025
Institute of Wide Bandgap Semiconductors and Future Lighting, Academy for Engineering & Technology, Fudan University, Shanghai 200433, China.
The progression of SiC MOSFET technology from planar to trench structures requires optimized gate oxide layers within the trench to enhance device performance. In this study, we investigated the interface characteristics of HfO and SiO/HfO gate dielectrics grown by atomic layer deposition (ALD) on SiC trench structures. The trench structure morphology was revealed using scanning electron microscopy (SEM).
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