Developing lead zirconate titanate (PZT)-based electro-optic (EO) modulators is vital for integrated photonics. The high annealing temperature required for the processing of PZT thin films restricts their compatibility with modern complementary metal-oxide-semiconductor (CMOS) technology. In this work, high-quality PZT films were fabricated on SiO/Si substrates at a low annealing temperature of 450 °C. The PZT films demonstrated a preferential (100) orientation and were uniform and crack-free. Based on the low-temperature PZT films, we subsequently designed and fabricated a Mach-Zehnder Interferometer (MZI) waveguide modulator. The measured half-wave voltage () was 4.8 V at a wavelength of 1550 nm, corresponding to an in-device EO coefficient as high as 66 pm/V, which shows potential use in optical devices. The results reported in this work show great promise for the integration of PZT thin films with other complex systems.
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| http://dx.doi.org/10.3390/ma18040837 | DOI Listing |
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