Wide Bandgap Tellurium Oxide Semiconductor as A Back Contact Modifier for Efficient n-i-p SbSe Solar Cells.

ACS Appl Mater Interfaces

Institute of New Energy Technology, College of Information Science and Technology, Jinan University, Guangzhou 510632, China.

Published: March 2025

The wide-bandgap and p-type semiconductor layer plays a crucial role in the antimony selenide (SbSe) solar cells, as it can provide carrier confinement and inhibit interface recombination. In this work, the tellurium (Te) thin layer is innovatively applied in superstrate SbSe solar cells, which is further in situ oxidized to wide-bandgap (3.67 eV) tellurium oxide (TeO). Experimental results indicate that both Te and TeO layers can enhance the built-in potential and depletion width of devices and reduce nonradiative recombination at back interfaces. Furthermore, the TeO layer enables better hole transportation due to the favorable band alignment at SbSe/TeO interfaces. As a congener of Selenium (Se), the Te component of TeO is found to effectively passivate the selenium vacancy () defects at the surface of SbSe absorbers. Consequently, the all-inorganic devices with TeO show a high voltage of 0.463 V and a champion power conversion efficiency of 9.67%, which is one of the highest efficiencies for the SbSe solar cells based on vacuum coating technology. This study provides a unique and useful back contact modification strategy for high-performance SbSe solar cells.

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http://dx.doi.org/10.1021/acsami.4c19438DOI Listing

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