The wide-bandgap and p-type semiconductor layer plays a crucial role in the antimony selenide (SbSe) solar cells, as it can provide carrier confinement and inhibit interface recombination. In this work, the tellurium (Te) thin layer is innovatively applied in superstrate SbSe solar cells, which is further in situ oxidized to wide-bandgap (3.67 eV) tellurium oxide (TeO). Experimental results indicate that both Te and TeO layers can enhance the built-in potential and depletion width of devices and reduce nonradiative recombination at back interfaces. Furthermore, the TeO layer enables better hole transportation due to the favorable band alignment at SbSe/TeO interfaces. As a congener of Selenium (Se), the Te component of TeO is found to effectively passivate the selenium vacancy () defects at the surface of SbSe absorbers. Consequently, the all-inorganic devices with TeO show a high voltage of 0.463 V and a champion power conversion efficiency of 9.67%, which is one of the highest efficiencies for the SbSe solar cells based on vacuum coating technology. This study provides a unique and useful back contact modification strategy for high-performance SbSe solar cells.
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http://dx.doi.org/10.1021/acsami.4c19438 | DOI Listing |
ACS Appl Mater Interfaces
March 2025
Laboratoire de Physico-Chimie de l'Atmosphère, Université du Littoral Côte d'Opale, Dunkerque 59140, France.
Antimony sesquiselenide has become an outstanding functional material for photovoltaics, energy storage and transformation, memory and photonic applications. SbSe is one of the most successful emerging solar light absorbers and has also been identified as a highly promising ultralow-loss phase-change material (PCM) for next-generation coherent nanophotonic processors, photonic tensor cores, quantum and neuromorphic networks. Unlike benchmark telluride PCMs, SbSe features a quasi-one-dimensional (1D) crystalline structure consisting of (Sb Se) ribbons, lacks the typical PCM chemical bonding, and undergoes an extended semiconductor-metal transition above the melting point.
View Article and Find Full Text PDFAngew Chem Int Ed Engl
February 2025
Hefei National Research Center for Physical Sciences at the Microscale, School of Chemistry and Materials Science, Key Laboratory of Energy Conversion Materials, Chinese Academy of Sciences, University of Science and Technology of China, Hefei, Anhui 230026, P. R. China.
Post-deposition treatment in thin film preparation can compensate for the inability of directly deposited films by fundamentally altering the chemical, electrical, morphological and defect properties. However, as an emerging photovoltaic material, the synthesis of SbSe film has so far been unable to effectively adjust the carrier transport and defect properties, thereby hindering performance improvement. In this study, we report that PO can serve as a post-deposition treatment material to modify the chemical and electrical properties of SbSe thin films.
View Article and Find Full Text PDFAdv Mater
November 2024
Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, and School of Physics and Technology, Wuhan University, Wuhan, 430072, China.
An effective defect passivation strategy is crucial for enhancing the performance of antimony selenosulfide (Sb(S,Se)) solar cells, as it significantly influences charge transport and extraction efficiency. Herein, a convenient and novel in situ passivation (ISP) technique is successfully introduced to enhance the performance of Sb(S,Se) solar cells, achieving a champion efficiency of 10.81%, which is among the highest recorded for Sb(S,Se) solar cells to date.
View Article and Find Full Text PDFFood Chem
January 2025
State Key Laboratory of Tea Plant Biology and Utilization, Anhui Agricultural University, 130 Changjiang West Road, Hefei, Anhui 230036, China; School of Tea and Food Science and Technology, Anhui Agricultural University, 130 Changjiang West Road, Hefei 230036, China. Electronic address:
Chem Mater
August 2023
Institute for Electronics, Department of Information Technology and Electrical Engineering, ETH Zurich, Gloriastrasse 35, CH-8092 Zurich, Switzerland.
Aliovalent I-V-VI semiconductor nanocrystals are promising candidates for thermoelectric and optoelectronic applications. Famatinite CuSbSe stands out due to its high absorption coefficient and narrow band gap in the mid-infrared spectral range. This paper combines experiment and theory to investigate the synthesis and electronic structure of colloidal CuSbSe nanocrystals.
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